Jagdish Narayan


John C. C. Fan Distinguished Professor

Email: j_narayan@ncsu.edu

Phone: 919-515-7874

Location: 3030 EB I

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Narayan's interests include Ion implantation and defects in semiconductors, rapid thermal and transient thermal processing of semiconductors, laser-solid interactions, doping, diffusion and gettering in semiconductors and supersaturated semiconductor alloys for advanced electronic devices, high temperature superconductors, diamond and diamond-like thin films, atomic scale characterization of defects and interfaces, physical and chemical vapor deposition of thin films, pulsed laser deposition, Laser-MBE, atomic-resolution electron microscopy, electrical and optical properties, modeling of thin film growth and defects and interfaces, novel approaches to thin film epitaxy, semiconductor thin film heterostructures and solid-state devices, and nanostructured materials.

Group's current research focus is on novel thin film heterostructures involving epitaxy across the misfit scale of oxides and nitrides and their integration on practical substrates including the (100) Si and sapphire substrates (US Patent # 7,803,717). Narayan invented domain matching epitaxy (DME), which is based upon matching of integral multiples of lattice planes across the film-substrate interface, to address epitaxial growth of heterostructures across the misfit scale (US Patents # 5,406,123 & 6,955,985). The proposed DME paradigm and strain relaxation mechanisms were verified by in-situ X-ray diffraction studies in a synchrotron. The DME paradigm is revolutionizing the growth and integration of III-nitrides and II-oxides on polar (c-sapphire) and nonpolar (r-sapphire and Si(100)), where fully relaxed films can be grown on substrates involving large misfits. Kopin (and Kobrite) Corp have licensed Narayan’s ten patents on DME and novel ZnMgO-ZnCdO materials (US Patents # 6,518,077 & 6,423,983) in addition to his patents on Quantum confined NanoPocket LEDs and low-resistivity transparent epitaxial Ohmic contacts to manufacture high efficiency LEDs for solid state lighting(US Patents # 6,881,983; 6,847,052; 6,734,091; 7,122,841).

Narayan invented integrated smart sensors and 3-D self-assembled nanostructures with oriented magnetic nanodots formed by the DME paradigm for information storage which NSF hailed as one of the breakthroughs of the year 2004 (US Patent # 7,105,118). Narayan’s work on bulk nanocrysatlline materials, which started with Phys. Rev. Lett. 46, 1491 (1981); US Patent # 4,376,755 and IR-100 Award (1982), started nanotechnology revolution in metal-ceramic nanocomposites. His most recent work on inverse Hall-Petch and grain softening, and twinning deformation in nanocrystalline materials has been highly cited and has laid the foundation for nanostructure and property correlations in nanoscale bulk materials.

Narayan also pioneered the concept of solute trapping in semiconductors by his discoveries of laser annealing in the late seventies and the formation of supersaturated semiconductor alloys for which he received 1981 US-DOE Award and 1983 IR-100 on Supersaturated Semiconductor Alloys that form the backbone of modern Integrated Circuits (Science 204, 461(1979); Science 252,416(1991)). Narayan received the 2011 Acta Materialia Gold Medal for these pioneering contributions and his leadership in materials science worldwide. The concept of solute trapping, which was introduced by John Cahn in the early seventies, resulted in the 2011 Kyoto Prize for Cahn and the 2011 Nobel Prize for Dan Shechtman for his work on quasicrystals which formed due to Mn solute trapping in aluminum-manganese alloys.

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North Carolina State University