Seminar Speaker: Zetian Mi, University of Michigan, Ann Arbor

Ultrawide-Bandgap Ferroelectric Nitride Semiconductors: Epitaxy, Properties, and Emerging Device Applications

Abstract

The incorporation of IIIB elements such as scandium (Sc) can transform conventional III-nitride semiconductors to be ferroelectric. This new class of ferroelectric nitride semiconductors can be seamlessly integrated with the well-established III-nitride electronics with promising applications in high power, high frequency, high temperature electronics, as well as memory and logic devices. Moreover, ferroelectric AlScN exhibits significantly enhanced piezoelectric and nonlinear optical response compared to AlN, which makes it attractive for high frequency resonators and filters and nonlinear optical processes. In this talk I will present recent advances of ferroelectric III-nitride semiconductors, including molecular beam epitaxy, structural, optical, electrical, and ferroelectric properties, as well as their emerging device applications.

Biography

Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. His teaching and research interests are in the areas of low dimensional semiconductors and their applications in photonics and electronics. Prof. Mi has received the Science and Engineering Award from W. M. Keck Foundation in 2020, the David E. Liddle Research Excellence Award in 2021, the Young Scientist Award from the International Symposium on Compound Semiconductors in 2015, the IEEE Photonics Society Distinguished Lecturer Award in 2020, and the IEEE Nanotechnology Council Distinguished Lecturer Award in 2023. Prof. Mi currently serves as the Editor-in-Chief of Progress in Quantum Electronics and Serial Editor of Semiconductors and Semimetals. Prof. Mi is a fellow of IEEE, APS, SPIE and Optica.