Ramón Collazo

University Faculty Scholar and Professor

Ramón Collazo received his BS in Physics from the University of Puerto Rico, San Juan, and has been involved in the growth and characterization of wide bandgap semiconductor thin films, especially nitrides and diamond, for the past 11 years. He has been particularly involved in developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunction along with their application to the first lateral p/n junction. Additionally, he has been involved in the development of AlN bulk single crystal substrates, their surface preparation, and further epitaxial thin film deposition for optoelectronics and power device applications. He was awarded the Facundo Bueso Medal for Physics and has authored over 60 publications and given presentations at national and international conferences.

Collazo’s research interests include Optoelectronic/Power Materials and Devices; III-N Wide Bandgap Semiconductors; Polar Materials: Nitrides and Oxides; Optics: Materials Characterization and Nonlinear

Publications

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024), JOURNAL OF APPLIED PHYSICS, 135(2). https://doi.org/10.1063/5.0179623
(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
Goorsky, M. S., Liao, M. E., Huynh, K., Wang, Y., Tweedie, J., Sitar, Z., … Huang, X. (2023), ECS Meeting Abstracts. https://doi.org/10.1149/MA2023-02351691mtgabs
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12), IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592
Anderson transition in compositionally graded p-AlGaN
Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023), JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419
Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
Demonstration of near-ideal Schottky contacts to Si-doped AlN
Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524
High conductivity and low activation energy in p-type AlGaN
Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023), Applied Physics Letters. https://doi.org/10.1063/5.0141863
High conductivity in Ge-doped AlN achieved by a non-equilibrium process
Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
High p-conductivity in AlGaN enabled by polarization field engineering
Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023), APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443

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Ramón Collazo