Sensor Electronic Technology, Inc. (SETi)
UV Emitters Based on Ultra Wide-Bandgap Materials
Location: BTEC Room 135
Thursday, March 31st 2016 - 11:00 am
Ultra wide-bandgap (UWBG) semiconductors (those with bandgaps greater than 3.4 eV), including high-Al-content aluminum gallium nitride (AlGaN), are becoming a material of choice for development of new generation deep ultraviolet (UV) light emitters, power electronics, and other optical and electronic devices. In particular, AlGaN-based deep ultraviolet light emitting diodes (LEDs) offer great advantages in size, weight, modulation speed, and control of operation wavelength compared to mercury vapor lamps and/or gas and solid state lasers. These unique features of semiconductor UV light sources enable new range of applications not addressable by incumbent technologies.
In this presentation we will review historic development of light emitting diodes operating in UV-C and UV-B spectral ranges. We will discuss challenges related to substrates, epitaxial growth, doping, and point and extended defects in AlGaN materials. Current performance of UV LEDs will be related to limitations in device designs and packaging technology. Present and potential commercial applications of UV light emitters will be discussed.