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The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure Journal of Applied Physics, 103(10). Zhang, R. H., Rozgonyi, G. A., Yakimov, E., Yarykin, N., & Seacrist, M. 2008
Evolution of deep-level centers in p-type silicon following ion implantation at 85 K Applied Physics Letters, 74(9), 1263-1265. Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. 1999
The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K Applied Physics Letters, 75(2), 241-243. Yarykin, N., Cho, C. R., Rozgonyi, G. A., & Zuhr, R. A. 1999
In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397-402. Yarykin, N., Cho, C. R., Zuhr, R. A., & Rozgonyi, G. A. 1999
Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures Applied Physics Letters, 73(9), 1206-1208. Kononchuk, O., Korablev, K. G., Yarykin, N., & Rozgonyi, G. A. 1999
Drift of interstitial iron in a space charge region of p-type Si Schottky diode Physica. B, Condensed Matter, 274(1999 Dec.), 395-397. Koveshnikov, S., Choi, B., Yarykin, N., & Rozgonyi, G. 1999
In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions Physica. B, Condensed Matter, 274(1999 Dec.), 485-488. Yarykin, N., Cho, C. R., Zuhr, R., & Rozgonyi, G. 1999
Silver-hydrogen interactions in crystalline silicon Physical Review. B, Condensed Matter and Materials Physics, 59(8), 5551-5560. Yarykin, N., Sachse, J. U., Lemke, H., & Weber, J. 1999

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