Publications

Showing results for "wagner" 1-19 of 19

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Morphological analysis of GeTe in inline phase change switches Journal of Applied Physics, 118(9). King, M. R., El-Hinnawy, N., Salmon, M., Gu, J., Wagner, B. P., Jones, E. B., Borodulin, P., Howell, R. S., Nichols, D. T., & Young, R. M. 2015
Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN Physical Review. B, Condensed Matter and Materials Physics, 90(4). Goni, A. R., Kaess, F., Reparaz, J. S., Alonso, M. I., Garriga, M., Callsen, G., Wagner, M. R., Hoffmann, A., & Sitar, Z. 2014
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements Physical Review. B, Condensed Matter and Materials Physics, 90(20). Callsen, G., Wagner, M. R., Reparaz, J. S., Nippert, F., Kure, T., Kalinowski, S., Hoffmann, A., Ford, M. J., Phillips, M. R., Dalmau, R. F., Schlesser, R., Collazo, R., & Sitar, Z. 2014
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements Journal of Applied Physics, 113(10). Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., Nenstiel, C., Wagner, M. R., Collazo, R., Hoffmann, A., & Sitar, Z. 2013
Effects of strain on the valence band structure and exciton-polariton energies in ZnO Physical Review. B, Condensed Matter and Materials Physics, 88(23). Wagner, M. R., Callsen, G., Reparaz, J. S., Kirste, R., Hoffmann, A., Rodina, A. V., Schleife, A., Bechstedt, F., Phillips, & M. R. 2013
Optical signature of Mg-doped GaN: Transfer processes Physical Review. B, Condensed Matter and Materials Physics, 86(7). Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Bugler, M., Brunnmeier, J., Nenstiel, C., Hoffmann, A., Hoffmann, M., Tweedie, J., Bryan, Z., Aygun, S., Kirste, R., Collazo, R., & Sitar, Z. 2012
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics, 110(9). Kirste, R., Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Sitar, Z., & Hoffmann, A. 2011
Optical properties of InN grown on templates with controlled surface polarities Physica Status Solidi. A, Applications and Materials Science, 207(10), 2351-2354. Kirste, R., Wagner, M. R., Schulze, J. H., Strittmatter, A., Collazo, R., Sitar, Z., Alevli, M., Dietz, N., & Hoffmann, A. 2010
Advances in biomedical and biomimetic materials: A collection of papers presented at the 2008 Materials Science and Technology Conference Narayan, R. J., Kumta, P. N., & Wagner, W. R. (2009). Advances in biomedical and biomimetic materials: A collection of papers presented at the 2008 Materials Science and Technology Conference. Hoboken, N.J.: J. Wiley & Sons. Narayan, R. J., Kumta, P. N., & Wagner, W. R. 2009
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0) Journal of Crystal Growth, 300(1), 83-89. Bishop, S. M., Park, J. S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. 2007
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates Journal of Crystal Growth, 290(2), 504-512. Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. 2006
Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001) Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(1), 72-77. Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. 2005
Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates Journal of Applied Physics, 97(11). Bai, J., Dudley, M., Chen, L., Skromme, B. J., Wagner, B., Davis, R. F., Chowdhury, U., & Dupuis, R. D. 2005
Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy Physical Review. B, Condensed Matter and Materials Physics, 71(23). Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. 2005
Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides Physical Review Letters, 95(8). Huang, X. R., Bai, J., Dudley, M., Wagner, B., Davis, R. F., & Zhu, Y. 2005
Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN Journal of Applied Physics, 98(6). Bai, J., Huang, X., Dudley, M., Wagner, B., Davis, R. F., Wu, L., Sutter, E., Zhu, Y., & Skromme, B. J. 2005
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Materials Science Forum, 457-460) (pp. 221-224). Utikon-Zurich, Switzerland: Trans Tech Publications. Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B. P., Reitmeier, Z., Janzen, E., & Davis, R. F. 2004
Cu, Nb and V on (110) TiO2 (rutile): epitaxy and chemical reactions Thin Solid Films, 398(2001 Nov 1), 419-426. Wagner, T., Marien, J., & Duscher, G. 2001
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746-1751. Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., Bremser, M. D., Davis, R. F., Amano, H., & Akasaki, I. 1999

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