Publications

Showing results for "venables" 1-10 of 10

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering Journal of the Electrochemical Society, 146(3), 1189-1196. Ban, I., & Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. 1999
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2 Journal of the Electrochemical Society, 146(8), 3070-3078. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. 1999
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic Journal of the Electrochemical Society, 146(8), 3079-3086. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. 1999
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors IEEE Electron Device Letters, 20(4), 179-181. Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, J. R., Wortman, J. J., Venables, R. D., Xu, M., & Venables, D. 1999
Characterization and production metrology of thin transistor gate oxide films Materials Science in Semiconductor Processing, 2(2), 103-147. Diebold, A. C., Venables, D., Chabal, Y., Muller, D., Weldon, M., & Garfunkel, E. 1999
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 471-475. Neogi, S. S., Venables, D., Na, Z. Y., & Maher, D. M. 1998
Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 362-366. Venables, D., Jain, H., & Collins, D. C. 1998
Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si Journal of Applied Physics, 84(11), 5997-6002. Krishnamoorthy, V., Moller, K., Jones, K. S., Venables, D., Jackson, J., & Rubin, L. 1998
Mapping two dimensional arsenic distributions in silicon using dopant selective chemical etching technique Journal of Applied Physics, 82(11), 5811-5815. Neogi, S. S., Venables, D., Ma, Z. Y., Maher, D. M., Taylor, M., & Corcoran, S. 1997
The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon Journal of Electronic Materials, 26(11), 1361-1364. Jones, K. S., Chen, J., Bharatan, S., Jackson, J., Rubin, L., Puga, Lambers, M., & Venables, D. 1997

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