Publications

Showing results for "tweedie" 1-25 of 37 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
High free carrier concentration in p-GaN grown on AlN substrates Applied Physics Letters, 111(3). Sarkar, B., Mita, S., Reddy, P., Klump, A., Kaess, F., Tweedie, J., Bryan, I., Bryan, Z., Kirste, R., Kohn, E., Collazo, R., & Sitar, Z. 2017
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth, 438, 81-89. Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. 2016
Strain engineered high reflectivity DBRs in the deep UV Proceedings of SPIE-the International Society for Optical Engineering, 9748). Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., Bobea, M., Tweedie, J., Kirste, R., Gerhold, M., Collazo, R., & Sitar, Z. 2016
The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth, 451, 65-71. Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., Tweedie, J., Maria, J. P., Collazo, R., & Sitar, Z. 2016
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers Journal of Applied Physics, 120(13). Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., Gerhold, M., Collazo, R., & Sitar, Z. 2016
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics, 120(18). Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., Klump, A., Tweedie, J., Kirste, R., Mita, S., Gerhold, M., Collazo, R., & Sitar, Z. 2016
KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode Applied Physics Letters, 106(8). Guo, W., Kirste, R., Bryan, I., Bryan, Z., Hussey, L., Reddy, P., Tweedie, J., Collazo, R., Sitar, Z. 2015
Growth and characterization of AlxGa1-xN lateral polarity structures Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039-1042. Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., Bryan, I., Bryan, Z., Gerhold, M., Collazo, R., & Sitar, Z. 2015
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Applied Physics Letters, 106(23). Bryan, Z., Bryan, I., Mita, S., Tweedie, J., Sitar, Z., & Collazo, R. 2015
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Applied Physics Letters, 107(9). Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Washiyama, S., Kirste, R., Mita, S., Collazo, R., & Sitar, Z. 2015
Properties of AlN based lateral polarity structures Physica Status Solidi C-Current Topics in Solid State Physics, 11 2) (pp. 261-264). Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., Bryan, Z., Tweedie, J., Gerhold, M., Hoffmann, A., Collazo, R., & Sitar, Z. 2014
Schottky contact formation on polar and non-polar AlN Journal of Applied Physics, 116(19). Reddy, P., Bryan, I., Bryan, Z., Tweedie, J., Kirste, R., Collazo, R., & Sitar, Z. 2014
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters, 105(22). Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., Guo, W., Hoffmann, M., Kirste, R., Tweedie, J., Gerhold, M., Irving, D. L., Sitar, Z., & Collazo, R. 2014
Surface preparation of non-polar single-crystalline AlN substrates Physica Status Solidi C-Current Topics in Solid State Physics, 11 3-4) (pp. 454-457). Bryan, I., Akouala, C. R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., Collazo, R., & Sitar, Z. 2014
Point defect management in GaN by Fermi-level control during growth Proceedings of SPIE-the International Society for Optical Engineering, 8986). Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Sitar, Z., & Collazo, R. 2014
Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth, 366, 20-25. Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., Bryan, I., Collazo, R., & Sitar, Z. 2013
Fermi level control of point defects during the growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J., Sitar, Z., and Collazo, R. 2013
X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics, 113(12). Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., Xie, J., Collazo, R., & Sitar, Z. 2013
Fermi level control of point defects during growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J. Q., Sitar, Z., & Collazo, R. 2013
Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters, 102(18). Kirste, R., Mita, S., Hussey, L., Hoffmann, M. P., Guo, W., Bryan, I., Bryan, Z., Tweedie, J., Xie, J. Q., Gerhold, M., Collazo, R., & Sitar, Z. 2013
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements Journal of Applied Physics, 113(10). Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., Nenstiel, C., Wagner, M. R., Collazo, R., Hoffmann, A., & Sitar, Z. 2013
Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi C-Current Topics in Solid State Physics, 9 3-4) (pp. 584-587). Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J. Q., Akouala, R. C., & Sitar, Z. 2012
Optical signature of Mg-doped GaN: Transfer processes Physical Review. B, Condensed Matter and Materials Physics, 86(7). Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Bugler, M., Brunnmeier, J., Nenstiel, C., Hoffmann, A., Hoffmann, M., Tweedie, J., Bryan, Z., Aygun, S., Kirste, R., Collazo, R., & Sitar, Z. 2012
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society, 158(5), H530-H535. Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. 2011
Strain in Si doped GaN and the Fermi level effect Applied Physics Letters, 98(20). Xie, J. Q., Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., & Sitar, Z. 2011

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