Publications

Showing results for "thomson" 1-25 of 35 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 7,378,684. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2008
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches Patent:
Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F.
2007
Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates Applied Physics Letters, 91(5). Chang, Y. C., Li, Y. L., Thomson, D. B., & Davis, R. F. 2007
Second gallium nitride layers that extend into trenches in first gallium nitride layers Patent:
Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. U.S. Patent No. 6,897,483. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F.
2005
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(1), 294-301. McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. 2003
Methods of fabricating gallium nitride microelectronic layers on silicon layers Patent:
Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2003). Methods of fabricating gallium nitride microelectronic layers on silicon layers. U.S. Patent No. 6,602,764. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M.
2003
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. U.S. Patent No. 6,376,339. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,462,355. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio Journal of Crystal Growth, 236(4), 529-537. Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., Wolter, S., Sitar, Z., & Davis, R. F. 2002
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions Solid-state Electronics, 46(6), 827-835. Danielsson, E., Zetterling, C. M., Ostling, M., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. 2002
High temperature nucleation and growth of GaN crystals from the vapor phase Journal of Crystal Growth, 241(4), 404-415. Shin, H., Thomson, D. B., Schlesser, R., Davis, R. F., & Sitar, Z. 2002
High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates Patent:
Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B. (2002). High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. U.S. Patent No. 6,489,221. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B.
2002
Effect of implantation temperature on damage accumulation in Ar-implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9-1. Usov, I., Parikh, N., Thomson, D. B., & Davis, R. F. 2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,177,688. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2001
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby Patent:
Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2001). Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,265,289. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F.
2001
In situ cleaning of GaN/6H-SiC substrates in NH3 Journal of Crystal Growth, 222(3), 452-458. McGinnis, A. J., Thomson, D., Davis, R. F., Chen, E., Michel, A., & Lamb, H. H. 2001
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby Patent:
Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. U.S. Patent No. 6,255,198. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M.
2001
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams Surface Science, 494(1), 28-42. McGinnis, A. J., Thomson, D., Davis, R. F., Chen, E., Michel, A., & Lamb, H. H. 2001
Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN Materials Science Forum, 338(3), 1615-1618. Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., Gehrke, T., Davis, R. F., & Krasnobaev, L. Y. 2000
Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(3), 879-881. Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. 2000
Dry etching and metallization schemes in a GaN/SiC heterojunction device process Materials Science Forum, 338(3), 1049-1052. Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., Nam, O. H., & Davis, R. F. 2000
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source Applied Physics Letters, 75(7), 989-991. Pavlovska, A., Torres, V. M., Bauer, E., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. 1999
Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy Physica Status Solidi. A, Applications and Materials Science, 176(1), 469-473. Pavlovska, A., Torres, V. M., Edwards, J. L., Bauer, E., Smith, D. J., Doak, R. B., Tsong, I. S. T., Thomson, D. B., & Davis, R. F. 1999
Characterization of Be-implanted GaN annealed at high temperatures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17). Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. 1999
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38). Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M., & Davis, R. F. 1999

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