Showing results for "sukidi" 1-7 of 7

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Orientation mediated self-assembled gallium phosphide islands grown on silicon Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 80(3), 555-572. Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. 2000
Initial stages of heteroepitaxy of GaP on selected silicon surfaces Journal of the Electrochemical Society, 146(3), 1147-1150. Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. 1999
Origins of defects in self assembled GaP islands grown on Si(001) and Si(111) Thin Solid Films, 357(1), 53-56. Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. 1999
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 54(3), 207-209. Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. 1998
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance Journal of Crystal Growth, 183(3), 323-337. Bachmann, K. J., Sukidi, N., Hopfner, C., Harris, C., Dietz, N., Tran, H. T., Beeler, S., Ito, K., & Banks, H. T. 1998
Real-time monitoring of surface processes by p-polarized reflectance Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807-815. Dietz, N., Sukidi, N., Harris, C. Jay, & Bachmann, K. J. 1997
Molecular layer epitaxy by real-time optical process monitoring Applied Surface Science, 112(1997 Mar.), 38-47. Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., Dietz, N. A., Tran, H. T., Beeler, S. C., Ito, K., & Banks, H. T. 1997

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