Publications

Showing results for "rozgonyi" 1-25 of 87 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing Electronic Materials Letters, 11(4), 658-663. Park, Y., Lu, J., Park, J. H., & Rozgonyi, G. 2015
The influence of hydrogenation on the electrical properties of impurity-contaminated silicon grain boundaries Electronic Materials Letters, 11(6), 993-997. Park, Y., Lu, J. G., Park, J. H., & Rozgonyi, G. 2015
Thermal misfit strain relaxation in Ge/(001)Si heterostructures Journal of Electronic Materials, 43(9), 3196-3203. Bharathan, J., Zhou, H. H., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2014
Molybdenum nano-precipitates in silicon: A TEM and DLTS study Physica Status Solidi. B, Basic Solid State Physics, 251(11), 2201-2204. Leonard, S., Markevich, V. P., Peaker, A. R., Hamilton, B., Yousseff, K., & Rozgonyi, G. 2014
Poisson ratio of epitaxial germanium films grown on silicon Journal of Electronic Materials, 42(1), 40-46. Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2013
Effect of oxygen and associated residual stresses on the mechanical properties of high growth rate Czochralski silicon Journal of Applied Physics, 113(13). Youssef, K., Shi, M., Radue, C., Good, E., & Rozgonyi, G. 2013
Defect characterization in Ge/(001)Si epitaxial films grown by reduced-pressure chemical vapor deposition Journal of Electronic Materials, 42(10), 2888-2896. Bharathan, J., Narayan, J., Rozgonyi, G., & Bulman, G. E. 2013
Fracture strength of photovoltaic silicon wafers evaluated using a controlled flaw method Advanced Engineering Materials, 15(8), 756-760. Shi, M. R., Youssef, K., & Rozgonyi, G. A. 2013
Modulation of electrical characteristics at a Ni-contaminated silicon grain boundary by engineering the metal precipitates Physica Status Solidi. A, Applications and Materials Science, 210(9), 1828-1831. Jiang, T. T., Yu, X. G., Gu, X., Rozgonyi, G., & Yang, D. R. 2013
Nano-indentation: A tool to investigate crack propagation related phase transitions in PV silicon Solar Energy Materials and Solar Cells, 96(1), 166-172. Kulshreshtha, P. K., Youssef, K. M., & Rozgonyi, G. 2012
Understanding the effect of impurities and grain boundaries on mechanical behavior of Si via nanoindentation of (110)/(100) direct Si bonded wafers Journal of Materials Research, 27(1), 349-355. Youssef, K., Yu, X. G., Seacrist, M., & Rozgonyi, G. 2012
Oxygen precipitation related stress-modified crack propagation in high growth rate Czochralski silicon wafers Journal of the Electrochemical Society, 159(2), H125-H129. Kulshreshtha, P. K., Yoon, Y., Youssef, K. M., Good, E. A., & Rozgonyi, G. 2012
Effect of nickel contamination on high carrier lifetime n-type crystalline silicon Journal of Applied Physics, 111(3). Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. 2012
Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012) Journal of Applied Physics, 111(4). Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. 2012
Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon Applied Physics Letters, 101(22). Yoon, Y., Yan, Y. X., Ostrom, N. P., Kim, J., & Rozgonyi, G. 2012
Effect of nickel contamination on high carrier lifetime n-type crystalline silicon (vol 111, 033702, 2012) Journal of Applied Physics, 111(4). Yoon, Y., Paudyal, B., Kim, J., Ok, Y. W., Kulshreshtha, P., Johnston, S., & Rozgonyi, G. 2012
Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary Electronic Materials Letters, 6(1), 1-5. Park, Y., Lu, J. G., & Rozgonyi, G. 2010
Modulation of 1.5 mu m dislocation-related luminescence emitted from a direct silicon bonded interface by external bias Applied Physics Letters, 96(21). Yu, X. G., Song, L. H., Yang, D. R., Kittler, M., & Rozgonyi, G. A. 2010
Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films Microelectronic Engineering, 87(11), 2230-2233. Yoon, Y. H., Yi, S. M., Yim, J. R., Lee, J. H., Rozgonyi, G., & Joo, Y. C. 2010
Effect of Au contamination on the electrical characteristics of a "model" small-angle grain boundary in n-type direct silicon bonded wafer Journal of Applied Physics, 108(5). Yu, X., Li, X., Fan, R., Yang, D., Kittler, M., Reiche, M., Seibt, M., & Rozgonyi, G. 2010
Effect of nickel contamination on grain boundary states at a direct silicon bonded (110)/(100) interface Scripta Materialia, 63(11), 1100-1103. Li, X. Q., Yu, X. G., Song, L. H., Yang, D. R., & Rozgonyi, G. 2010
Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers Journal of Applied Physics, 105(1). Park, Y., Lu, J., & Rozgonyi, G. 2009
Proximity gettering of Cu at a (110)/(001) grain boundary interface formed by direct silicon bonding Applied Physics Letters, 94(22). Yu, X., Lu, J., Youssef, K., & Rozgonyi, G. 2009
Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure Journal of Applied Physics, 105(7). Lu, J. G., Yu, X. G., Park, Y., & Rozgonyi, G. 2009
Capacitance transient study of the influence of iron contamination on the electrical characteristics of silicon grain boundaries Applied Physics Letters, 92(8). Lu, J. G., & Rozgonyi, G. 2008

North Carolina State University