Publications

Showing results for "ronning" 1-17 of 17

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Aligned carbon nanotubes sandwiched in epitaxial NbC film for enhanced superconductivity Nanoscale, 4(7), 2268-2271. Zhang, Y. Y., Ronning, F., Gofryk, K., Mara, N. A., Haberkorn, N., Zou, G. F., Wang, H. Y., Lee, J. H., Bauer, E., McCleskey, T. M., Burell, A. K., Civale, L., Zhu, Y. T., & Jia, Q. X. 2012
Ion implantation into gallium nitride Physics Reports, 351(5), 349-385. Ronning, C., Carlson, E. P., & Davis, R. F. 2001
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates Journal of Crystal Growth, 231(3), 335-341. Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., & Mehregany, M. 2001
Photoluminescence characterization of Mg implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622-U628. Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., & Davis, R. F. 2000
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery Journal of Applied Physics, 87(5), 2149-2157. Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., Hofsass, H., Gehrke, T., Jarrendahl, K., & Davis, R. F. 2000
Pendeo-epitaxial growth of gallium nitride on silicon substrates Journal of Electronic Materials, 29(3), 306-310. Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., Mehregany, M., & Davis, R. F. 2000
Characterization of Be-implanted GaN annealed at high temperatures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17). Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. 1999
Room temperature growth of cubic boron nitride Applied Physics Letters, 74(11), 1552-1554. Feldermann, H., Merk, R., Hofsass, H., Ronning, C., & Zheleva, T. 1999
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces Journal of Applied Physics, 86(8), 4483-4490. King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. 1999
Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface Journal of Electronic Materials, 28(12), L34-L37. King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. 1999
Optical activation of Be implanted into GaN Applied Physics Letters, 73(12), 1622-1624. Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. 1998
Lattice site location studies of ion implanted Li-8 in GaN Journal of Applied Physics, 84(6), 3085-3089. Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsass, H., Bremser, M. D., Ronning, C., Davis, R. F., Wahl, U., & Bharuth-Ram, K. 1998
Cleaning of AlN and GaN surfaces Journal of Applied Physics, 84(9), 5248-5260. King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. 1998
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction Journal of Applied Physics, 84(4), 2086-2090. King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. 1998
X-ray photoelectron diffraction from (3X3) and (root 3X root3)R30 degrees (001)(Si) 6H-SiC surfaces Journal of Applied Physics, 84(11), 6042-6048. King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. 1998
Structural and electronic properties of boron nitride thin films containing silicon Journal of Applied Physics, 84(9), 5046-5051. Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., Ward, B. L., & Nemanich, R. J. 1998
Carbon nitride deposited using energetic species: A review on XPS studies Physical Review. B, Condensed Matter and Materials Physics, 58(4), 2207-2215. Ronning, C., Feldermann, H., Merk, R., Hofsass, H., Reinke, P., & Thiele, J. U. 1998

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