Publications

Showing results for "rice" 1-25 of 27 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth, 438, 81-89. Bryan, I., Bryan, Z., Mita, S., Rice, A., Tweedie, J., Collazo, R., & Sitar, Z. 2016
The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth, 451, 65-71. Bryan, I., Bryan, Z., Mita, S., Rice, A., Hussey, L., Shelton, C., Tweedie, J., Maria, J. P., Collazo, R., & Sitar, Z. 2016
Surface preparation of non-polar single-crystalline AlN substrates Physica Status Solidi C-Current Topics in Solid State Physics, 11 3-4) (pp. 454-457). Bryan, I., Akouala, C. R., Tweedie, J., Bryan, Z., Rice, A., Kirste, R., Collazo, R., & Sitar, Z. 2014
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters, 102(6). Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., Xie, J., Kirste, R., Collazo, R., & Sitar, Z. 2013
Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth, 366, 20-25. Guo, W., Xie, J., Akouala, C., Mita, S., Rice, A., Tweedie, J., Bryan, I., Collazo, R., & Sitar, Z. 2013
Fermi level control of point defects during the growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J., Sitar, Z., and Collazo, R. 2013
X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics, 113(12). Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., Xie, J., Collazo, R., & Sitar, Z. 2013
Fermi level control of point defects during growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J. Q., Sitar, Z., & Collazo, R. 2013
Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of SPIE-the International Society for Optical Engineering, 8631). Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., Mita, S., Collazo, R., & Sitar, Z. 2013
Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions Applied Physics Letters, 103(12). Neuschl, B., Thonke, K., Feneberg, M., Goldhahn, R., Wunderer, T., Yang, Z., Johnson, N. M., Xie, J., Mita, S., Rice, A., Collazo, R., & Sitar, Z. 2013
Schottky barrier and interface chemistry for Ni contacted to Al0.8Ga0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi C-Current Topics in Solid State Physics, 9 3-4) (pp. 584-587). Tweedie, J., Collazo, R., Rice, A., Mita, S., Xie, J. Q., Akouala, R. C., & Sitar, Z. 2012
Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Applied Physics Letters, 98(8). Craft, H. S., Rice, A. L., Collazo, R., Sitar, Z., & Maria, J. P. 2011
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society, 158(5), H530-H535. Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. 2011
Strain in Si doped GaN and the Fermi level effect Applied Physics Letters, 98(20). Xie, J. Q., Mita, S., Rice, A., Tweedie, J., Hussey, L., Collazo, R., & Sitar, Z. 2011
Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi. A, Applications and Materials Science, 208(7), 1520-1522. Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J. Q., Mita, S., & Goldhahn, R. 2011
On the strain in n-type GaN Applied Physics Letters, 99(14). Xie, J. Q., Mita, S., Hussey, L., Rice, A., Tweedie, J., LeBeau, J., Collazo, R., & Sitar, Z. 2011
265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization 2011 Conference on Lasers and Electro-Optics (CLEO), ). Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., & Sitar, Z. 2011
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. 2011
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics, 110(9). Kirste, R., Collazo, R., Callsen, G., Wagner, M. R., Kure, T., Reparaz, J. S., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Sitar, Z., & Hoffmann, A. 2011
Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi. A, Applications and Materials Science, 207 1) (pp. 45-48). Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. 2010
Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. (2010). Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 Rice, A., Collazo, R., Tweedie, J., Xie, J., Mita, S., & Sitar, Z. 2010
X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Tweedie, J., Collazo, R., Rice, A., Xie, J. Q., Mita, S., Dalmau, R., & Sitar, Z. (2010). X-ray characterization of composition and relaxation of AlxGa1-xN(0 Tweedie, J., Collazo, R., Rice, A., Xie, J. Q., Mita, S., Dalmau, R., & Sitar, Z. 2010
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics, 108(4). Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., & Sitar, Z. 2010
The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters, 97(12). Xie, J., Mita, S., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. 2010
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics, 104(1). Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. 2008

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