Publications

Showing results for "reitmeier" 1-17 of 17

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates Acta Materialia, 58(6), 2165-2175. Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. 2010
Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates Acta Materialia, 57(14), 4001-4008. Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. 2009
Growth and fabrication of AlGaN-based ultraviolet light emitting diodes on 6H-SiC(0001) substrates and the effect of carrier-blocking layers on their emission characteristics Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 127(2-3), 169-179. Park, J. S., Reitmeier, Z. J., Fothergill, D., Zhang, X. Y., Muth, J. F., & Davis, R. F. 2006
Growth and characterization of pendeo-epitaxial GaN(11(2)over-bar0) on 4H-SiC(11(2)over-bar0) substrates Journal of Crystal Growth, 290(2), 504-512. Wagner, B. P., Reitmeier, Z. J., Park, J. S., Bachelor, D., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. 2006
Effect of thermal annealing on the metastable optical properties of GaN thin films Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 24(4), 1051-1054. Chang, Y. C., Kolbas, R. M., Reitmeier, Z. J., & Davis, R. F. 2006
Preparation and characterization of atomically clean, stoichlometric surfaces of AIN(0001) Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 23(1), 72-77. Mecouch, W. J., Wagner, B. P., Reitmeier, Z. J., Davis, R. F., Pandarinath, C., Rodriguez, B. J., & Nemanich, R. J. 2005
On the microstructure of AlxGa1-xN layers grown on 6H-SiC(0001) substrates Journal of Applied Physics, 97(8). Kroger, R., Einfeldt, S., Chierchia, R., Hommel, D., Reitmeier, Z. J., Davis, R. F., & Liu, Q. K. K. 2005
Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy Physical Review. B, Condensed Matter and Materials Physics, 71(23). Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. 2005
Effect of carrier blocking layers on the emission characteristics of AlGaN-based ultraviolet light emitting diodes Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 44(10), 7254-7259. Park, J. S., Fothergill, D. W., Zhang, X. Y., Reitmeier, Z. J., Muth, J. F., & Davis, R. F. 2005
A printable form of single-crystalline gallium nitride for flexible optoelectronic systems Small (Weinheim An Der Bergstrasse, Germany), 1(12), 1164-1168. Lee, K. J., Lee, J., Hwang, H. D., Reitmeier, Z. J., Davis, R. F., Rogers, J. A., & Nuzzo, R. G. 2005
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Materials Science Forum, 457-460) (pp. 221-224). Utikon-Zurich, Switzerland: Trans Tech Publications. Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B. P., Reitmeier, Z., Janzen, E., & Davis, R. F. 2004
In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(5), 2077-2082. Reitmeier, Z. J., Park, J. S., Mecouch, W. J., & Davis, R. F. 2004
GaN evaporation and enhanced diffusion of Ar during high- temperature ion implantation Journal of Applied Physics, 93(9), 5140-5142. Usov, I., Parikh, N., Kudriavtsev, Y., Asomoza, R., Reitmeier, Z., & Davis, R. 2003
Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394-400. Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. 2003
Surface morphology and strain of GaN layers grown using 6H- SiC(0001) substrates with different buffer layers Journal of Crystal Growth, 253(1-4), 129-141. Einfeldt, S., Reitmeier, Z. J., & Davis, R. F. 2003
Gallium nitride and related materials: challenges in materials processing Acta Materialia, 51(19), 5961-5979. Davis, R. F., Einfeldt, S., Preble, E. A., Roskowski, A. M., Reitmeier, Z. J., & Miraglia, P. Q. 2003
Electron-beam-induced optical memory effects in GaN Applied Physics Letters, 80(15), 2675-2677. Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., Einfeldt, S., & Davis, R. F. 2002

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