Publications

Showing results for "reisman" 1-15 of 15

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby Patent:
Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2001). Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby. U.S. Patent No. 6,271,150. Washington, DC: U.S. Patent and Trademark Office. Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K.
2001
Planarization processes and applications III. As-deposited and annealed film properties Journal of the Electrochemical Society, 147(4), 1513-1524. Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. 2000
Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films Journal of the Electrochemical Society, 147(4), 1560-1567. Simpson, D. L., Croswell, R. T., Reisman, A., Williams, C. K., & Temple, D. 2000
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters Journal of the Electrochemical Society, 147(5), 1847-1853. Soman, R., Reisman, A., Temple, D., & Alberti, R. 2000
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters Journal of the Electrochemical Society, 147(5), 1854-1858. Soman, R., Reisman, A., Temple, D., Alberti, R., & Pace, C. 2000
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H Journal of the Electrochemical Society, 147(11), 4333-4341. Soman, R., Reisman, A., & Temple, D. 2000
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar Journal of the Electrochemical Society, 147(11), 4342-4344. Soman, R., Reisman, A., & Temple, D. 2000
An alternative derivation for the equilibrium constant of binary solid solution-vapor systems Journal of the Electrochemical Society, 146(10), 3817-3818. Soman, R., Reisman, A., & Temple, D. 1999
Planarization processes and applications - I. Undoped GeO2-SiO2 glasses Journal of the Electrochemical Society, 146(10), 3860-3871. Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. 1999
Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes Journal of the Electrochemical Society, 146(10), 3872-3885. Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. 1999
Differential thermal analysis of glass mixtures containing Sio2, Geo2, B2o3, and P2o5 Journal of the Electrochemical Society, 146(12), 4569-4579. Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. 1999
Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures Journal of Electronic Materials, 27(7), 908-914. Kim, H. S., Williams, C. K., & Reisman, A. 1998
Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 k in insulated gate field effect transistors Journal of Applied Physics, 81(3), 1566-1574. Kim, H. S., Williams, C. K., & Reisman, A. 1997
Low-field trap generation dependence on the injection current density in gate insulators: How valid are accelerated hot electron measurements? Journal of the Electrochemical Society, 144(7), 2517-2521. Kim, H. S., Reisman, A., & Williams, C. K. 1997
High performance integrated circuit chip package Patent:
Turlik, I., Reisman, A., Nayak, D., Hwang, L., Dishon, G., Jacobs, S., Darveaux, R., Poley, & Neil, M. (1994). High performance integrated circuit chip package. U.S. Patent No. 5,325,265. Washington, DC: U.S. Patent and Trademark Office. Turlik, I., Reisman, A., Nayak, D., Hwang, L., Dishon, G., Jacobs, S., Darveaux, R., Poley, & Neil, M.
1994

North Carolina State University