Publications

Showing results for "reeber" 1-14 of 14

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Modeling of residual stresses for thermally strained GaN/Al2O3 heterostructures Journal of Crystal Growth, 266(4), 415-422. Ashmawi, W. M., Zikry, M. A., Wang, K., & Reeber, R. R. 2004
High temperature elastic constant prediction of some group III-nitrides MRS Internet Journal of Nitride Semiconductor Research, 6(3), 1-5. Reeber, R. R., & Wang, K. 2001
Thermal expansion and elastic properties of InN Applied Physics Letters, 79(11), 1602-1604. Wang, K., & Reeber, R. R. 2001
Fourth-order elastic constants of magnesium oxide Physica Status Solidi. B, Basic Solid State Physics, 228(3), 837-845. Wang, K., Reeber, R. R., & Salama, K. 2001
Lattice parameters and thermal expansion of GaN Journal of Materials Research, 15(1), 40-44. Reeber, R. R., & Wang, K. 2000
Mode Gruneisen parameters and negative thermal expansion of cubic ZrW2O8 and ZrMo2O8 Applied Physics Letters, 76(16), 2203-2204. Wang, K., & Reeber, R. R. 2000
The perfect crystal, thermal vacancies and the thermal expansion coefficient of aluminium Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 80(7), 1629-1643. Wang, K., & Reeber, R. R. 2000
Thermophysical properties of alpha-tungsten carbide Journal of the American Ceramic Society, 82(1), 129-135. Reeber, R. R., & Wang, K. 1999
Thermal residual stress modeling in AlN and GaN multilayer samples MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.18). Wang, K., & Reeber, R. R. 1999
The role of defects on thermophysical properties: Thermal expansion of V, Nb, Ta, Mo and W Materials Science & Engineering. R, Reports, 23(3), 101-137. Wang, K., & Reeber, R. R. 1998
Thermal expansion of GaN and AlN Wang, K., & Reeber, R. R. (1998). Thermal expansion of GaN and AlN. In F. A. Ponce ... et al. (Eds.), Nitride semiconductors: Symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings; v. 482).. (pp. 863-868). Warrendale, Pa.: Materials Research Society, 1998. Wang, K., & Reeber, R. R. 1998
Finite element modeling of thermal residual stress in Tungsten/Tungsten-carbide composites Ceramic Engineering and Science Proceedings, 19(4), 177-184. Wang, K., & Reeber, R. R. 1998
Surface modification of boron carbide to form pockets of solid lubricant Patent:
Reeber, R., Chu, W., & Yu, N. (1991). Surface modification of boron carbide to form pockets of solid lubricant. U.S. Patent No. 5,075,130. Washington, DC: U.S. Patent and Trademark Office. Reeber, R., Chu, W., & Yu, N.
1991
Gradient lens fabrication Patent:
Reeber, R. R., Chu, W. K., & Bedair, S. M. (1990). Gradient lens fabrication. U.S. Patent No. 4,956,000. Washington, DC: U.S. Patent and Trademark Office. Reeber, R. R., Chu, W. K., & Bedair, S. M.
1990

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