Publications

Showing results for "rawdanowicz" 1-6 of 6

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 34(2). Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Rawdanowicz, T. A., Liu, Y., White, R. M., & Iyer, S. 2016
Structural and magnetic properties of sol-gel derived NiFe2O4 thin films on silicon substrates Journal of Magnetism and Magnetic Materials, 361, 255-261. Seifikar, S., Rawdanowicz, T., Straka, W., Quintero, C., Bassiri-Gharb, N., & Schwartz, J. 2014
Growth of (111) oriented NiFe2O4 polycrystalline thin films on Pt(111) via sol-gel processing Journal of Applied Physics, 112(6). Seifikar, S., Tabei, A., Sachet, E., Rawdanowicz, T., Bassiri-Gharb, N., & Schwartz, J. 2012
Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(3). Bharatan, S., Iyer, S., Li, J., Rawdanowicz, T. A., & Reynolds, L. 2011
Epitaxial GaN on Si(111): Process control of SiNx interlayer formation Applied Physics Letters, 85(1), 133-135. Rawdanowicz, T. A., & Narayan, J. 2004
Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy Journal of Applied Physics, 92(1), 296-301. Rawdanowicz, T. A., Iyer, S., Mitchel, W. C., Saxler, A., & Elhamri, S. 2002

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