Publications

Showing results for "rajagopal" 1-24 of 24

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 7,378,684. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2008
Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate Applied Physics Letters, 92(2). Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. 2008
Gallium nitride material transistors and methods associated with the same Patent:
Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. U.S. Patent No. 7,352,016. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A.
2008
Gallium nitride material structures including substrates and methods associated with the same Patent:
Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J. (2008). Gallium nitride material structures including substrates and methods associated with the same. U.S. Patent No. 7,365,374. Washington, DC: U.S. Patent and Trademark Office. Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J.
2008
Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate Applied Physics Letters, 90(15). Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. 2007
Gallium nitride material transistors and methods associated with the same Patent:
Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A. (2006). Gallium nitride material transistors and methods associated with the same. U.S. Patent No. 7,135,720. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A.
2006
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. U.S. Patent No. 6,376,339. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,462,355. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,177,688. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2001
Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates Zeitschrift fur MetallkundeAmerican Journal of Physiology, 92(2), 163-166. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. 2001
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization Journal of Crystal Growth, 225(2-4), 134-140. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., Zorman, C. A., & Mehregany, M. 2001
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1-16. Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., Preble, E. A., Zorman, C. A., Mehregany, M., Schwarz, U., Schuck, J., & Grober, R. 2001
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates Journal of Crystal Growth, 231(3), 335-341. Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., & Mehregany, M. 2001
Photoluminescence characterization of Mg implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622-U628. Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., & Davis, R. F. 2000
Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition Materials Science Forum, 338(3), 1491-1494. Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. 2000
Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46-U57. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., & Mehregany, M. 2000
Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films Materials Science Forum, 338(3), 1471-1476. Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. 2000
Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(3), 879-881. Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. 2000
Pendeo-epitaxial growth of gallium nitride on silicon substrates Journal of Electronic Materials, 29(3), 306-310. Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., Mehregany, M., & Davis, R. F. 2000
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38). Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M., & Davis, R. F. 1999
Pendeo-epitaxy of gallium nitride thin films Applied Physics Letters, 75(2), 196-198. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., Batchelor, D., & Davis, R. 1999
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films Journal of Electronic Materials, 28(4), L5-L8. Zheleva, T. S., Smith, S. A., Thomson, D. B., Linthicum, K. J., Rajagopal, P., & Davis, R. F. 1999
Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2). Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., & Davis, R. F. 1999
Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37). Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., & Davis, R. F. 1999

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