Publications

Showing results for "preble" 1-25 of 31 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Universal phonon mean free path spectra in crystalline semiconductors at high temperature Scientific Reports, 3. Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. 2013
Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire Physica Status Solidi. A, Applications and Materials Science, 209(3), 559-564. Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., Udwary, K., Preble, E. A., & Evans, K. R. 2012
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate Semiconductor Science and Technology, 26(2). Wang, Y. Q., Alur, S., Sharma, Y., Tong, F., Thapa, R., Gartland, P., Issacs-Smith, T., Ahyi, C., Williams, J., Park, M., Johnson, M., Paskova, T., Preble, E. A., & Evans, K. R. 2011
Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth Journal of Crystal Growth, 312(7), 902-905. Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., Preble, E. A., & Evans, K. R. 2010
Optimization of homoepitaxially grown AlGaN/GaN heterostructures Physica Status Solidi. A, Applications and Materials Science, 207(10), 2292-2299. Grenko, J. A., Ebert, C. W., Reynolds, C. L., Duscher, G. J., Barlage, D. W., Johnson, M. A. L., Preble, E. A., Paskova, T., & Evans, K. R. 2010
Physical properties of AlGaN/GaN heterostructures grown on vicinal substrates Journal of Electronic Materials, 39(5), 504-516. Grenko, J. A., Reynolds, C. L., Barlage, D. W., Johnson, M. A. L., Lappi, S. E., Ebert, C. W., Preble, E. A., Paskova, T., & Evans, K. R. 2010
Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates Journal of Applied Physics, 106(11). Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., Udwary, K., Preble, E. A., & Evans, K. R. 2009
Accurate dependence of gallium nitride thermal conductivity on dislocation density Applied Physics Letters, 89(9). Mion, C., Muth, J. F., Preble, E. A., & Hanser, D. 2006
Structural TEM study of nonpolar a-plane gallium nitride grown on (1120) 4H-SiC by organometallic vapor phase epitaxy Physical Review. B, Condensed Matter and Materials Physics, 71(23). Zakharov, D. N., Liliental-Weber, Z., Wagner, B., Reitmeier, Z. J., Preble, E. A., & Davis, R. F. 2005
Growth of homoepitaxial films on 4H-SiC(1120) and 8 degrees off-axis 4H-SiC(0001) substrates and their characterization Materials Science Forum, 457-460) (pp. 221-224). Utikon-Zurich, Switzerland: Trans Tech Publications. Bishop, S. M., Preble, E. A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B. P., Reitmeier, Z., Janzen, E., & Davis, R. F. 2004
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(1), 294-301. McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. 2003
Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures Journal of Crystal Growth, 253(1-4), 16-25. Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. 2003
Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures Thin Solid Films, 437(37623), 140-149. Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. 2003
Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers Journal of Crystal Growth, 258(1/2), 75-83. Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. 2003
Gallium nitride and related materials: challenges in materials processing Acta Materialia, 51(19), 5961-5979. Davis, R. F., Einfeldt, S., Preble, E. A., Roskowski, A. M., Reitmeier, Z. J., & Miraglia, P. Q. 2003
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films Journal of Applied Physics, 91(4), 2133-2137. Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., Davis, R. F., Albrecht, M., & Smith, D. J. 2002
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy Applied Physics Letters, 80(6), 953-955. Einfeldt, S., Roskowski, A. M., Preble, E. A., & Davis, R. F. 2002
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio Journal of Crystal Growth, 236(4), 529-537. Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., Wolter, S., Sitar, Z., & Davis, R. F. 2002
Maskless pendeo-epitaxial growth of GaN films Journal of Electronic Materials, 31(5), 421-428. Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. 2002
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE Journal of Crystal Growth, 241(1-2), 141-150. Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. 2002
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence IEEE Journal of Quantum Electronics, 38(8), 1006-1016. Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. 2002
Gallium nitride materials - Progress, status, and potential roadblocks Proceedings of the IEEE, 90(6), 993-1005. Davis, R. F., Roskowski, A. M., Preble, E. A., Speck, J. S.. Heying, B., Freitas, J. A., Glaser, E. R., & Carlos, W. E. 2002
Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples Ultramicroscopy, 92(3-4), 265-271. Preble, E. A., McLean, H. A., Kiesel, S. M., Miraglia, P., Albrecht, M., & Davis, R. F. 2002
Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy Opto-electronics Review, 10(4), 261-270. Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. 2002
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization Journal of Crystal Growth, 225(2-4), 134-140. Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Preble, E. A., Rajagopal, P., Zorman, C. A., & Mehregany, M. 2001

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