Showing results for "porter" 1-9 of 9
The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.
|The role of grain size on neutron irradiation response of nanocrystalline copper||Materials, 9(3).||2016|
|Microstructure and mechanical behavior of neutron irradiated ultrafine grained ferritic steel||Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 615, 128-138.||2014|
|Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films||Journal of Applied Physics, 103(8).||2008|
|Photoluminescence study of ZnO films codoped with nitrogen and tellurium||Journal of Applied Physics, 100(12).||2006|
|Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates||Thin Solid Films, 515(4), 1807-1813.||2006|
|Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium||Applied Physics Letters, 86(21).||2005|
|The physics of ohmic contacts to SiC||Physica Status Solidi. B, Basic Solid State Physics, 202(1), 581-603.||1997|
|Method of forming platinum ohmic contact to p-type silicon carbide||
Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1995). Method of forming platinum ohmic contact to p-type silicon carbide. U.S. Patent No. 5,409,859. Washington, DC: U.S. Patent and Trademark Office.
|Platinum ohmic contact to p-type silicon carbide||
Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1994). Platinum ohmic contact to p-type silicon carbide. U.S. Patent No. 5,323,022. Washington, DC: U.S. Patent and Trademark Office.