Publications

Showing results for "piner" 1-20 of 20

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate Applied Physics Letters, 92(2). Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. 2008
Gallium nitride material transistors and methods associated with the same Patent:
Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. U.S. Patent No. 7,352,016. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A.
2008
Semiconductor device-based sensors Patent:
Johnson, J. W., Piner, E. L., & Linthicum, K. J. (2008). Semiconductor device-based sensors. U.S. Patent No. 7,361,946. Washington, DC: U.S. Patent and Trademark Office. Johnson, J. W., Piner, E. L., & Linthicum, K. J.
2008
Gallium nitride material structures including substrates and methods associated with the same Patent:
Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J. (2008). Gallium nitride material structures including substrates and methods associated with the same. U.S. Patent No. 7,365,374. Washington, DC: U.S. Patent and Trademark Office. Piner, E. L., Rajagopal, P., Roberts, J. C., & Linthicum, K. J.
2008
Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate Applied Physics Letters, 90(15). Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. 2007
Gallium nitride material transistors and methods associated with the same Patent:
Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A. (2006). Gallium nitride material transistors and methods associated with the same. U.S. Patent No. 7,135,720. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A.
2006
Gallium nitride materials and methods Patent:
Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. U.S. Patent No. 6,649,287. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J.
2003
Gallium nitride materials and methods Patent:
Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. U.S. Patent No. 6,617,060. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J.
2003
Gallium nitride material devices and methods including backside vias Patent:
Weeks, T. W., Piner, E. L., Borges, R. M., & Linthicum, K. J. (2003). Gallium nitride material devices and methods including backside vias. U.S. Patent No. 6,611,002. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Borges, R. M., & Linthicum, K. J.
2003
Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies Journal of Electronic Materials, 30(4), 439-444. Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., Roberts, J. C., & Bedair, S. M. 2001
Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22). Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. 1999
Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy Journal of Applied Physics, 86(1), 281-288. Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., Piner, E. L., & Molnar, R. J. 1999
Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition Applied Physics Letters, 75(15), 2202-2204. Behbehani, M. K., Piner, E. L., Liu, S. X., El-Masry, N. A., & Bedair, S. M. 1999
Phase separation in InGaN grown by metalorganic chemical vapor deposition Applied Physics Letters, 72(1), 40-42. ElMasry, N. A., Piner, E. L., Liu, S. X., & Bedair, S. M. 1998
Optical memory effect in GaN epitaxial films Applied Physics Letters, 71(2), 234-236. Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. 1997
Growth and characterization of in-based nitride compounds Journal of Crystal Growth, 178(1-2), 32-44. Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & El-Masry N. A. 1997
Optical transitions in InGaN/AlGaN single quantum wells Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139-1143. Zeng, K. C., Smith, M., Lin, J. Y., Jiang, H. X., Roberts, John C., Piner, E. L., & McIntosh, F. G. 1997
Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films Applied Physics Letters, 71(14), 2023-2025. Piner, E. L., Behbehani, M. K., El-Masry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. 1997
Effect of hydrogen on the indium incorporation in ingan epitaxial films Applied Physics Letters, 70(4), 461-463. Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. 1997
Epitaxial deposition of gainn and inn using the rotating susceptor ale system Applied Surface Science, 112(1997 Mar.), 98-101. McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., El-Masry, N. A., & Bedair, S. M. 1997

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