Publications

Showing results for "perry" 1-9 of 9

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Stimulated emission in GaN thin films in the temperature range of 300-700 K Journal of Applied Physics, 85(3), 1792-1795. Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., Goldenberg, B., Yang, W., Perry, W. G., Bremser, M. D., & Davis, R. F. 1999
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates Journal of Electronic Materials, 27(4), 238-245. Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T. S., Carlson, E. P., Banks, A. D., Therrien, R. J., & Davis, R. F. 1998
Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC Thin Solid Films, 324(1-2), 107-114. Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. 1998
Intrinsic exciton transitions in GaN Journal of Applied Physics, 83(1), 455-461. Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., Song, J. J., Kim, S. S., Goldenberg, B., Horning, R., Krishnankutty, S., Perry, W. G., Bremser, M. D.., & Davis, R. F. 1998
Cathodoluminescence studies of the deep level emission bands of AlxGa1 xN films deposited on 6H SiC(0001) Journal of Applied Physics, 83(1), 469-475. Perry, W. G., Bremser, M. B., & Davis, R. F. 1998
Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy Journal of Electronic Materials, 27(4), 229-232. Bremser, M. D., Perry, W. G., Nam, O.-H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. 1998
Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates Journal of the European Ceramic Society, 17(15-16), 1775-1779. Davis, R. F., Bremser, M. D., Perry, W. G., & Ailey, K. S. 1997
Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates Diamond and Related Materials, 6(2-4), 196-201. Bremser, M. D., Perry, W. G., Zheleva, T. S., Edwards, N. V., Nam, O. H., Parikh, N., Aspnes, D. E., & Davis, R. F. 1997
Raman analysis of the configurational disorder in AlxGa1-xN films Applied Physics Letters, 71(15), 2157-2159. Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. 1997

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