Publications

Showing results for "palmour" 1-9 of 9

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Structure and chemistry of passivated SiC/SiO2 interfaces Applied Physics Letters, 108(20). Dycus, J. H., Xu, W. Z., Lichtenwalner, D. J., Hull, B., Palmour, J. W., & LeBeau, J. M. 2016
Method of forming platinum ohmic contact to p-type silicon carbide Patent:
Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1995). Method of forming platinum ohmic contact to p-type silicon carbide. U.S. Patent No. 5,409,859. Washington, DC: U.S. Patent and Trademark Office. Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S.
1995
Platinum ohmic contact to p-type silicon carbide Patent:
Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S. (1994). Platinum ohmic contact to p-type silicon carbide. U.S. Patent No. 5,323,022. Washington, DC: U.S. Patent and Trademark Office. Glass, R. C., Palmour, J. W., Davis, R. F., & Porter, L. S.
1994
Thin-film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon-carbide Proceedings of the IEEE, 79(5), 677-701. Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., & Edmond, J. A. 1991
Dry etching of silicon carbide Patent:
Palmour, J. W. (1991). Dry etching of silicon carbide. U.S. Patent No. 4981551. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W.
1991
Bipolar junction transistor on silicon carbide Patent:
Palmour, J. W., & Edmond, J. A. (1990). Bipolar junction transistor on silicon carbide. U.S. Patent No. 4945394. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W., & Edmond, J. A.
1990
Dry etching of silicon carbide Patent:
Palmour, J. W. (1989). Dry etching of silicon carbide. U.S. Patent No. 4865685. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W.
1989
Metal-insulator-semiconductor capacitor formed on silicon carbide Patent:
Palmour, J. W. (1989). Metal-insulator-semiconductor capacitor formed on silicon carbide. U.S. Patent No. 4875083. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W.
1989
Process for sintering finely divided particulates and resulting ceramic products Patent:
Palmour III, H. & Huckabee, M. L. (1975). Process for sintering finely divided particulates and resulting ceramic products. U.S. Patent No. 3,900,542. Washington, DC: U.S. Patent and Trademark Office. Palmour III, H. & Huckabee, M. L.
1975

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