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|Seeded growth process for preparing aluminum nitride single crystals||
Schlesser, R., Noveski, V., & Sitar, Z. (2010). Seeded growth process for preparing aluminum nitride single crystals. U.S. Patent No. 7,678,195.
|Dense, shaped articles constructed of a refractory material and methods of preparing such articles||
Schlesser, R., Dalmau, R. F., Noveski, V., & Sitar, Z. (2009). Dense, shaped articles constructed of a refractory material and methods of preparing such articles. U.S. Patent No. 7,632,454.
|Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling||Crystal Growth and Design, 5(4), 1491-1498.||2005|
|Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules||Journal of Crystal Growth, 279(02-Jan), 13-19.||2005|
|Mass transfer in A1N crystal growth at high temperatures||Journal of Crystal Growth, 264(1/3), 369-378.||2004|
|Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere||MRS Internet Journal of Nitride Semiconductor Research, 9(2).||2004|
|The growth and optical properties of large, high-quality AlN single crystals||Journal of Applied Physics, 96(10), 5870-5876.||2004|