Publications

Showing results for "niimi" 1-25 of 36 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Comparison of ultrathin SiO2/Si(100) and SiO2/Si(111) interfaces from soft x-ray photoelectron spectroscopy Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 24(4), 2132-2137. Ulrich, M. D., Rowe, J. E., Keister, J., Niimi, H., Fleming, L., & Lucovsky, G. 2006
Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions Journal of Physics. Condensed Matter, 16(17), S1815-S1837. Lucovsky, G., & Niimi, H. 2004
Low-temperature Ar/N-2 remote plasma nitridation of SiO2 thin films Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 20(6), 1989-1996. Khandelwal, A., Niimi, H., Lucovsky, G., & Lamb, H. H. 2002
Reaction pathways in remote plasma nitridation of ultrathin SiO2 films Journal of Applied Physics, 91(1), 48-55. Niimi, H., Khandelwal, A., Lamb, H. H., & Lucovsky, G. 2001
The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices IEEE Electron Device Letters, 21(2), 76-78. Yang, H., Niimi, H., Keister, J. W., & Lucovsky, G. 2000
Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737-1741. Brillson, L. J., Young, A. P., White, B. D., Schafer, J., Niimi, H., Lee, Y. M., & Lucovsky, G. 2000
Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1742-1748. Lucovsky, G., Yang, H., Niimi, H., Keister, J. W., Rowe, J. E., Thorpe, M. F., & Phillips, J. C. 2000
Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1163-1168. Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. 2000
New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(4), 1230-1233. Johnson, R. S., Niimi, H., & Lucovsky, G. 2000
Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces Applied Surface Science, 159(2000 June), 50-61. Lucovsky, G., Niimi, H., Wu, Y., & Yang, H. 2000
Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179-2186. Lucovsky, G., Yang, H., Niimi, H., Thorpe, M. F., & Phillips, J. C. 2000
Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces Applied Surface Science, 166(1-4), 485-491. Niimi, H., Yang, H. Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. 2000
Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics Thin Solid Films, 374(2), 217-227. Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. 2000
Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics Applied Physics Letters, 74(14), 2005-2007. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. 1999
Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1250-1257. Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Tao, H. S., Madey, T. E., & Lucovsky, G. 1999
Cathodoluminescence spectroscopy of nitrided SiO2-Si interfaces Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1258-1262. Young, A. P., Bandhu, R., Schafer, J., Niimi, H., & Lucovsky, G. 1999
Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1806-1812. Lucovsky, G., Wu, Y., Niimi, H., Misra, V., & Phillips, J. C. 1999
Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1813-1822. Wu, Y., Niimi, H., Yang, H., Lucovsky, G., & Fair, R. B. 1999
Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1831-1835. Keister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Madey, T. E., & Lucovsky, G. 1999
Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836-1839. Misra, V., Lazar, H., Wang, Z., Wu, Y., Niimi, H., Lucovsky, G., Wortman, J. J., & Hauser, J. R. 1999
Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces Microelectronic Engineering, 48(1-4), 303-306. Therrien, R., Niimi, H., Gehrke, T., Lucovsky, G., & Davis, R. F. 1999
The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics Microelectronic Engineering, 48(1-4), 307-310. Yang, H., Niimi, H., Wu, Y., Lucovsky, G., Keister, J. W., & Rowe, J. E. 1999
Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(6), 3185-3196. Niimi, H., & Lucovsky, G. 1999
Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(6), 2610-2621. Niimi, H., & Lucovsky, G. 1999
Differences between silicon oxycarbide regions at SiC-SiO2 prepared by plasma-assisted oxidation and thermal oxidations Applied Surface Science, 123(1998 Jan.), 435-439. Lucovsky, G., Niimi, H., Golz, A., & Kurz, H. 1998

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