Publications

Showing results for "nam" 1-25 of 25

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth Patent:
Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. U.S. Patent No. 6,602,763. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D.
2003
Gallium nitride semiconductor structures including lateral gallium nitride layers Patent:
Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. U.S. Patent No. 6,570,192. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D.
2003
Gallium nitride semiconductor structure including laterally offset patterned layers Patent:
Davis, R. F., & Nam, O.-H. (2003). Gallium nitride semiconductor structure including laterally offset patterned layers. U.S. Patent No. 6,608,327. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., & Nam, O.-H.
2003
Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures Applied Physics Letters, 80(17), 3099-3101. Aumer, M. E., Leboeuf, S. F., Moody, B. F., Bedair, S. M., Nam, K., Lin, J. Y., & Jiang, H. X. 2002
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions Solid-state Electronics, 46(6), 827-835. Danielsson, E., Zetterling, C. M., Ostling, M., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. 2002
Lateral epitaxy and dislocation density reduction in selectively grown GaN structures Journal of Crystal Growth, 222(4), 706-718. Zheleva, T. S., Nam, O. H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. 2001
Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films Materials Science Forum, 338(3), 1471-1476. Davis, R. F., Nam, O. H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., & Rajagopal, P. 2000
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer Patent:
Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. U.S. Patent No. 6,051,849. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D.
2000
Dry etching and metallization schemes in a GaN/SiC heterojunction device process Materials Science Forum, 338(3), 1049-1052. Danielsson, E., Zetterling, C. M., Ostling, M., Lee, S. K., Linthicum, K. J., Thomson, D. B., Nam, O. H., & Davis, R. F. 2000
Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures Applied Physics Letters, 74(17), 2492-2494. Zheleva, T. S., Ashmawi, W. M., Nam, O. H., & Davis, R. F. 1999
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN Diamond and Related Materials, 8(2-5), 288-294. Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. 1999
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 61-2(1999 July 30), 320-324. Danielsson, E., Zetterling, C. M., Ostling, M., Breitholtz, B., Linthicum, K., Thomson, D. B., Nam, O. H., & Davis, R. F. 1999
Biological uptake of influent organic matter as an electron donor for denitrification by activated sludge Biotechnology Techniques, 13(6), 415-418. Shin, H. S., Nam, S. Y., Jun, H. B., & Park, H. S. 1999
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy Journal of Electronic Materials, 27(4), 233-237. Nam, O.-H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. 1998
Optical and structural properties of lateral epitaxial overgrown GaN layers Journal of Crystal Growth, 190(1998 June), 92-96. Freitas, J. A., Nam, O. H., Zheleva, T. S., & Davis, R. F. 1998
Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy Journal of Electronic Materials, 27(4), 229-232. Bremser, M. D., Perry, W. G., Nam, O.-H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. 1998
Photoelectrochemical capacitance-voltage measurements in GaN Journal of Electronic Materials, 27(5), L26-L28. Stutz, C. E., Mack, M., Bremser, M. D., Nam, O.-H., Davis, R. F., & Look, D. C. 1998
Electron emission properties of crystalline diamond and III-nitride surfaces Applied Surface Science, 132(1998 June), 694-703. Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. 1998
Optical characterization of lateral epitaxial overgrown GaN layers Applied Physics Letters, 72(23), 2990-2992. Freitas, J. A., Nam, O. H., Davis, R. F., Saparin, G. V., & Obyden, S. K. 1998
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy Journal of Applied Physics, 84(9), 5238-5242. Ward, B. L., Nam, O. H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., & Nemanich, R. J. 1998
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures Applied Physics Letters, 71(17), 2472-2474. Zheleva, T. S., Nam, O.-H., Bremser, M. D., & Davis, R. F. 1997
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy Applied Physics Letters, 71(18), 2698-2640. Nam, O.-H., Bremser, M. D., Zheleva, T. S., & Davis, R. F. 1997
Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates Diamond and Related Materials, 6(2-4), 196-201. Bremser, M. D., Perry, W. G., Zheleva, T. S., Edwards, N. V., Nam, O. H., Parikh, N., Aspnes, D. E., & Davis, R. F. 1997
Variation of GaN valence bands with biaxial stress and quantification of residual stress Applied Physics Letters, 70(1997), 2001. Edwards, N. V., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., Liu, H., Stall, R. A., Horton, M. N., Perkins, N. R., Kuech, T. F., Yoo, S. D., & Aspnes, D. E. 1997
Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532-L535. Nam, O.-H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. 1997

North Carolina State University