Publications

Showing results for "maher" 1-18 of 18

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements Journal of the Electrochemical Society, 153(1), F12-F19. Ehrstein, J., Richter, C., Chandler-Horowitz, D., Vogel, E., Young, C., Shah, S., Maher, D., Foran, B., Hung, P. Y., & Diebold, A. 2006
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon Applied Surface Science, 181(1-2), 78-93. Chambers, J. J., Busch, B. W., Schulte, W. H., Gustafsson, T., Garfunkel, E., Wang, S., Maher, D. M., Klein, T. M., & Parsons, G. N. 2001
Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170-2177. Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., Nemanich, R. J., & Maher, D. M. 1999
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering Journal of the Electrochemical Society, 146(3), 1189-1196. Ban, I., & Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. 1999
Effects of oxygen on selective silicon deposition using disilane Materials Letters, 38(6), 418-422. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., & Maher, D. M. 1999
Quality of selective silicon Epitaxial films deposited using disilane and chlorine Journal of the Electrochemical Society, 146(6), 2337-2343. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. 1999
Effects of oxygen during selective silicon Epitaxial growth using disilane and chlorine Journal of the Electrochemical Society, 146(6), 2344-2352. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. 1999
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2 Journal of the Electrochemical Society, 146(8), 3070-3078. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. 1999
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic Journal of the Electrochemical Society, 146(8), 3079-3086. O'Neil, P. A., Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. 1999
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2o3 thin films on Si(100) Applied Physics Letters, 75(25), 4001-4003. Klein, T. M., Niu, D., Epling, W. S., Li, W., Maher, D. M., Hobbs, C. C., Hegde, R. I., Baumvol, I. J. R., & Parsons, G. N. 1999
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 471-475. Neogi, S. S., Venables, D., Na, Z. Y., & Maher, D. M. 1998
Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases Journal of Applied Physics, 83(10), 5469-5476. Li, V. Z. Q., Mirabedini, M. R., Hornung, B. E., Heinisch, H. H., Xu, M., Batchelor, D., Maher, D. M., Wortman, J. J., & Kuehn, R. T. 1998
Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine Journal of the Electrochemical Society, 144(9), 3309-3315. O'Neil, P. A., Ozturk, M. C., Violette, K. E., Batchelor, D., Christensen, K., & Maher, D. M. 1997
Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications Applied Physics Letters, 71(23), 3388-3390. Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., Christensen, K., & Maher, D. M. 1997
Precise and accurate refinements of the 220 structure factor for silicon by the systematic-row cbed method Ultramicroscopy, 69(3), 169-183. Swaminathan, S., Altynov, S., Jones, I. P., Zaluzec, N. J., Maher, D. M., & Fraser, H. L. 1997
Mapping two dimensional arsenic distributions in silicon using dopant selective chemical etching technique Journal of Applied Physics, 82(11), 5811-5815. Neogi, S. S., Venables, D., Ma, Z. Y., Maher, D. M., Taylor, M., & Corcoran, S. 1997
Effects of debye-waller factors and compositional uncertainties on the 200 structure factor refinement in gamma tial Philosophical Magazine Letters, 75(5), 261-270. Swaminathan, S., Jones, I. P., Maher, D. M., Johnson, A. W. S., & Fraser, H. L. 1997
Center for Advanced Electronic Materials Processing Proceedings of the IEEE, 81(1), 42-59. Masnari, N. A., Hauser, J. R., Lucovsky, G., Maher, D. M., Markunas, R. J., Ozturk, M. C., & Wortman, J. J. 1993

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