Publications

Showing results for "lucovsky" 1-25 of 310 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Multipactor coating for sapphire RF windows using remote plasma-assisted deposition IEEE Transactions on Plasma Science, 43(8), 2571-2580. Ives, R. L., Zeller, D., Lucovsky, G., Schamiloglu, E., Marsden, D., Collins, G., Nichols, K., & Karimov, R. 2015
Remote plasma-processing (RPP), medium range order, and precursor sites for dangling bond defects in "amorphous-Si(H)" alloys: Photovoltaic and thin film transistor devices Surface & Coatings Technology, 242, 183-186. Lucovsky, G., Zeller, D. J., Cheng, C., & Zhang, Y. 2014
Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n-1 for 9 >= n > 3, and TiO2-HfO2 alloys Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1). Lucovsky, G., & Kim, J. 2013
Noncrystalline SiO2 and GeO2: Process induced pre-existing defects and vacated O-atom intrinsic bonding sites Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 31(1). Lucovsky, G., Kim, J., Wu, K., & Zeller, D. 2013
Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2 Solid-state Electronics, 83, 30-36. Lucovsky, G. 2013
Spectroscopic detection of medium range order in device grade hydrogenated amorphous silicon Japanese Journal of Applied Physics, 52(4). Lucovsky, G., Parsons, G., Zeller, D., & Kim, J. 2013
Band-edge electronic structure and pre-existing defects in remote plasma deposited non-crystalline SiO2 and GeO2 Japanese Journal of Applied Physics, 52(4). Lucovsky, G. 2013
Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies International Conference on Ultimate Integration on Silicon, ) (pp. 174-177). Lucovsky, G., & Kim, J. 2013
Nano-scale order in hydrogenated amorphous silicon a-Si,H and doped a-Si(H) defect reduction for device applications International Conference on Ultimate Integration on Silicon, ) (pp. 217-220). Lucovsky, G. 2013
Process induced pre-existing defects in non-crystalline SiO2 and GeO2 at vacated O-atom bonding sites and comparisons with Ge-S(Se) alloy bonding sites Journal of Physics Conference Series, 428). Lucovsky, G., Zeller, D., Kim, J., & Wu, K. 2013
Ligand field splittings in core level transitions for transition metal (TM) oxides: Tanabe-Sugano diagrams and (TM) dangling bonds in vacated O-atom defects Journal of Physics Conference Series, 428). Lucovsky, G., Wu, K., Pappas, B., & Whitten, J. 2013
Many-electron multiplet theory applied to O-vacancies in (i) nanocrystalline HfO2 and (ii) nn-crystalline SiO2 and Si oxynitride alloys Progress in Theoretical Chemistry and Physics, 23) (pp. 193-211). Lucovsky, G., Miotti, L., & Bastos, K. P. 2012
Spectroscopic detection of hopping induced mixed valence of Ti and Sc in GdSc1-xTixO3 for x greater than percolation threshold of 0.16 Progress in Theoretical Chemistry and Physics, 23) (pp. 361-376). Lucovsky, G., Miotti, L., & Bastos, K. P. 2012
Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x > 0.165 Journal of Nanoscience and Nanotechnology, 12(6), 4749-4756. Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. 2012
O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy Journal of Nanoscience and Nanotechnology, 12(6), 4811-4819. Lucovsky, G., Miotti, L., & Bastos, K. P. 2012
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping Applied Physics Letters, 98(2). Gokce, B., Aspnes, D. E., Lucovsky, G., & Gundogdu, K. 2011
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5 Journal of Applied Physics, 109(3). Washington, J. S., Joseph, E. A., Raoux, S., Jordan-Sweet, J. L., Miller, D., Cheng, H. Y., Schrott, A. G., Chen, C. F., Dasaka, R., Shelby, B., Lucovsky, G., Paesler, M. A., Miotti, L., Lung, H. L., Zhang, Y., & Lam, C. H. 2011
O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1). Lucovsky, G., Miotti, L., & Bastos, K. P. 2011
Spectroscopic detection of hopping induced mixed valence for Ti and Sc in GdSc1-xTixO3 for x greater than the percolation threshold of similar to 0.16 Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1). Lucovsky, G., Miotti, L., Bastos, K. P., Adamo, C., & Schlom, D. G. 2011
Nanoscale depth-resolved electronic properties of SiO2/SiOx/SiO2 for device-tolerant electronics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 29(1). Katz, E. J., Zhang, Z., Hughes, H. L., Chung, K. B., Lucovsky, G., & Brillson, L. J. 2011
Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate Applied Physics Letters, 98(13). Soares, G. V., Krug, C., Miotti, L., Bastos, K. P., Lucovsky, G., Baumvol, I. J. R., & Radtke, C. 2011
Many-electron multiplet theory applied to o-atom vacancies in high-k dielectrics Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). Lucovsky, G., Miotti, L., & Bastos, K. P. 2011
Multiplet theory for conduction band edge and O-Vacancy defect states in SiO2, Si3N4, and Si oxynitride alloy thin films Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 50(4). Lucovsky, G. 2011
Radiation effects in new materials for nano-devices (invited) Microelectronic Engineering, 88 7) (pp. 1259-1264). Schrimpf, R. D., Fleetwood, D. M., Alles, M. L., Reed, R. A., Lucovsky, G., & Pantelides, S. T. 2011
Remote plasma-deposited GeO(2) with quartz-like Ge- and O-local bonding: Band-edge state and O-vacancy comparisons with SiO(2) Microelectronic Engineering, 88 7) (pp. 1537-1540). Lucovsky, G., Zeller, D., Wu, K., & Whitten, J. L. 2011

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