Publications

Showing results for "lichtenwalner" 1-22 of 22

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Structure and chemistry of passivated SiC/SiO2 interfaces Applied Physics Letters, 108(20). Dycus, J. H., Xu, W. Z., Lichtenwalner, D. J., Hull, B., Palmour, J. W., & LeBeau, J. M. 2016
Origin of multiplexing capabilities of multifrequency magnetic ratchets Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics, 85(4). Ouyang, Y. Y., Tahir, M. A., Lichtenwalner, D. J., & Yellen, B. B. 2012
Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN Applied Physics Letters, 98(4). Jur, J. S., Wheeler, V. D., Lichtenwalner, D. J., Maria, J. P., & Johnson, M. A. L. 2011
Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications Applied Physics Letters, 98(4). Yang, Z., Hoffmann, S., Lichtenwalner, D. J., Krim, J., & Kingon, A. I. 2011
Investigation of the origin of V(T)/V(FB) modulation by La(2)O(3) capping layer approaches for NMOS application: Role of la diffusion, effect of host high-k layer, and interface properties IEEE Transactions on Electron Devices, 58(9), 3106-3115. Lee, B., Novak, S. R., Lichtenwalner, D. J., Yang, X. Y., & Misra, V. 2011
Impact of AlTaO dielectric capping on device performance and reliability for advanced metal gate/high-k PMOS application IEEE Transactions on Electron Devices, 58(9), 2928-2935. Lee, B., Lichtenwalner, D. J., Novak, S. R., & Misra, V. 2011
Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures Applied Physics Letters, 96(9). Jayanti, S., Yang, X. Y., Lichtenwalner, D. J., & Misra, V. 2010
Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates Applied Physics Letters, 96(11). Suri, R., Lichtenwalner, D. J., & Misra, V. 2010
Comparison of Au and Au-Ni alloys as contact materials for MEMS switches Journal of Microelectromechanical Systems, 18(2), 287-295. Yang, Z. Y., Lichtenwalner, D. J., Morris, A. S., Krim, J., & Kingon, A. I. 2009
High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric Applied Physics Letters, 95(15). Lichtenwalner, D. J., Misra, V., Dhar, S., Ryu, S. H., & Agarwal, A. 2009
Zn-Sn co-doping effect on crystallization and texturing characteristics of indium oxide thin films Journal of Ceramic Processing Research, 10) (pp. S116-S119). Lee, H. Y., Lee, J. H., Kim, J. J., Lichtenwalner, D. J., & Kingon, A. I. 2009
High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control Applied Physics Letters, 92(11). LeBeau, J. M., Jur, J. S., Lichtenwalner, D. J., Craft, H. S., Maria, J. P., Kingon, A. I., Klenov, D. O., Cagnon, J., & Stemmer, S. 2008
Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric Applied Physics Letters, 92(24). Suri, R., Lichtenwalner, D. J., & Misra, V. 2008
Epitaxial growth of high-kappa dielectrics for GaN MOSFETs Materials Research Society Symposium Proceedings, 1068) (pp. 63-68). Jur, J. S., Wheeler, G. D., Veety, M. T., Lichtenwalner, D. J., Barlage, D. W., & Johnson, M. A. L. 2008
High temperature stability of lanthanum silicate dielectric on Si (001) Applied Physics Letters, 90(10). Jur, J. S., Lichtenwalner, D. J., & Kingon, A. I. 2007
Flexible thin film temperature and strain sensor array utilizing a novel sensing concept Sensors and Actuators. A, Physical, 135(2), 593-597. Lichtenwalner, D. J., Hydrick, A. E., & Kingon, A. I. 2007
A new test facility for efficient evaluation of MEMS contact materials Journal of Micromechanics and Microengineering, 17(9), 1788-1795. Yang, Z., Lichtenwalner, D., Morris, A., Menzel, S., Nauenheim, C., Gruverman, A., Krim, J., & Kingon, A. I. 2007
Analysis of interface states in LaSixOy metal-insulator-semiconductor structures Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 46(10A), 6480-6488. Inoue, N., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. 2007
High-temperature stability of lanthanum silicate gate dielectric MIS devices with Ta and TaN electrodes Journal of the Electrochemical Society, 153(9), F210-F214. Lichtenwalner, D. J., Jur, J. S., Jha, R., Inoue, N., Chen, B., Misra, V., & Kingon, A. I. 2006
Work function engineering using lanthanum oxide interfacial layers Applied Physics Letters, 89(23), 232103. Alshareef, H. N., Quevedo-Lopez, M., Wen, H. C., Harris, R., Kirsch, P., Majhi, P., Lee, B. H., Jammy, R., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. 2006
Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction Journal of Applied Physics, 98(2). Lichtenwalner, D. J., Jur, J. S., Kingon, A. I., Agustin, M. P., Yang, Y., Stemmer, S., Goncharova, L. V., Gustafsson, T., & Garfunkel, E. 2005
Hybrid metal/metal oxide electrodes for ferroelectric capacitors Patent:
Kingon, A. I., Al-Shareef, H. N., Auciello, O. H., Gifford, K. D., Lichtenwalner, D. J., & Dat, R. (1996). Hybrid metal/metal oxide electrodes for ferroelectric capacitors. U.S. Patent No. 5,555,486. Washington, DC: U.S. Patent and Trademark Office. Kingon, A. I., Al-Shareef, H. N., Auciello, O. H., Gifford, K. D., Lichtenwalner, D. J., & Dat, R.
1996

North Carolina State University