Publications

Showing results for "kingon" 1-25 of 138 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation Journal of Applied Physics, 113(20). Gaddy, B. E., Kingon, A. I., & Irving, D. L. 2013
Impact of Joule heating, roughness, and contaminants on the relative hardness of polycrystalline gold Journal of Physics. Condensed Matter, 25(47). Freeze, C. R., Ji, X. Y., Kingon, A. I., & Irving, D. L. 2013
Scaling issues in ferroelectric barium strontium titanate tunable planar capacitors IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 59(2), 198-204. Lam, P. G., Haridasan, V., Feng, Z. P., Steer, M. B., Kingon, A. I., & Maria, J. P. 2012
Tunable ferroelectric microwave bandpass filters optimised for system-level integration IET Microwaves, Antennas & Propagation, 5(10), 1234-1241. Haridasan, V., Lam, P. G., Feng, Z., Fathelbab, W. M., Maria, J. P., Kingon, A. I., & Steer, M. B. 2011
Resolution of the transfer direction of field-evaporated gold atoms for nanofabrication and microelectromechanical system applications Applied Physics Letters, 98(4). Yang, Z., Hoffmann, S., Lichtenwalner, D. J., Krim, J., & Kingon, A. I. 2011
The valley of death as context for role theory in product innovation Journal of Product Innovation Management, 27(3), 402-417. Markham, S. K., Ward, S. J., Aiman-Smith, L., & Kingon, A. I. 2010
Comparison of Au and Au-Ni alloys as contact materials for MEMS switches Journal of Microelectromechanical Systems, 18(2), 287-295. Yang, Z. Y., Lichtenwalner, D. J., Morris, A. S., Krim, J., & Kingon, A. I. 2009
The Impact of metallization thickness and geometry for X-band tunable microwave filters IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 56(5), 906-911. Lam, P. G., Feng, Z. P., Haridasan, V., Kingon, A. I., Steer, M. B., & Maria, J. P. 2009
Zn-Sn co-doping effect on crystallization and texturing characteristics of indium oxide thin films Journal of Ceramic Processing Research, 10) (pp. S116-S119). Lee, H. Y., Lee, J. H., Kim, J. J., Lichtenwalner, D. J., & Kingon, A. I. 2009
A 6.2-7.5 GHz tunable bandpass filter with integrated barium strontium titanate (BST) interdigitated varactors utilizing silver/copper metallization IEEE Radio and Wireless Symposium, ) (pp. 607-610). Feng, Z. P., Fathelbab, W. M., Lam, P. G., Haridasan, V., Maria, J., Kingon, A. I., & Steer, M. B. 2009
The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices Journal of Applied Physics, 104(2). Rezvanian, O., Brown, C., Zikry, M. A., Kingon, A. I., Krim, J., Irving, D. L., & Brenner, D. W. 2008
High temperature stability of Hf-based gate dielectric stacks with rare-earth oxide layers for threshold voltage control Applied Physics Letters, 92(11). LeBeau, J. M., Jur, J. S., Lichtenwalner, D. J., Craft, H. S., Maria, J. P., Kingon, A. I., Klenov, D. O., Cagnon, J., & Stemmer, S. 2008
Effects of adhesion layers on the ferroelectric properties of lead zirconium titanate thin films deposited on silicon nitride coated silicon substrates Thin Solid Films, 516(18), 6052-6057. Zohni, O., Buckner, G., Kim, T., Kingon, A., Maranchi, J., & Siergiej, R. 2008
Thickness dependence of submicron thick Pb(Zr0.3Ti0.7)O-3 films on piezoelectric properties Ceramics International, 34(8), 1909-1915. Kim, D. J., Park, J. H., Shen, D., Lee, J. W., Kingon, A. I., Yoon, Y. S., & Kim, S. H. 2008
Multiscale analysis of liquid lubrication trends from industrial machines to micro-electrical-mechanical systems Langmuir, 23(18), 9253-9257. Brenner, D. W., Irving, D. L., Kingon, A. I., & Krim, J. 2007
Low dielectric loss BaNd2Ti5O14 thick films prepared by an electrophoretic deposition technique Applied Physics Letters, 90(5). Fu, Z., Wu, A. Y., Vilarinho, P. M., Kingon, A. I., & Wordenweber, R. 2007
High temperature stability of lanthanum silicate dielectric on Si (001) Applied Physics Letters, 90(10). Jur, J. S., Lichtenwalner, D. J., & Kingon, A. I. 2007
Flexible thin film temperature and strain sensor array utilizing a novel sensing concept Sensors and Actuators. A, Physical, 135(2), 593-597. Lichtenwalner, D. J., Hydrick, A. E., & Kingon, A. I. 2007
Investigating thin film stresses in stacked silicon dioxide/silicon nitride structures and quantifying their effects on frequency response Journal of Micromechanics and Microengineering, 17(5), 1042-1051. Zohni, O., Buckner, G., Kim, T., Kingon, A., Maranchi, J., & Siergiej, R. 2007
Lead zirconate titanate thin film capacitors on electroless nickel coated copper foils for embedded passive applications Thin Solid Films, 515(18), 7331-7336. Kim, T., Kingon, A. I., Maria, J. P., & Croswell, R. T. 2007
A new test facility for efficient evaluation of MEMS contact materials Journal of Micromechanics and Microengineering, 17(9), 1788-1795. Yang, Z., Lichtenwalner, D., Morris, A., Menzel, S., Nauenheim, C., Gruverman, A., Krim, J., & Kingon, A. I. 2007
Analysis of interface states in LaSixOy metal-insulator-semiconductor structures Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 46(10A), 6480-6488. Inoue, N., Lichtenwalner, D. J., Jur, J. S., & Kingon, A. I. 2007
Effects of annealing on the electrical properties of highly resistive float zone p-type silicon Physica. B, Condensed Matter, 401, 155-158. Vankova, V., & Kingon, A. I. 2007
Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device Patent:
Cross, J. S., Tsukada, M., Horii, Y., Gruverman, A., & Kingon, A. (2007). Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device. U.S. Patent No. 7,241,656. Washington, DC: U.S. Patent and Trademark Office. Cross, J. S., Tsukada, M., Horii, Y., Gruverman, A., & Kingon, A.
2007
Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip Patent:
Cross, J. S., Tsukada, M., Horii, Y., Gruverman, A., & Kingon, A. (2007). Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip. U.S. Patent No. 7,239,026. Washington, DC: U.S. Patent and Trademark Office. Cross, J. S., Tsukada, M., Horii, Y., Gruverman, A., & Kingon, A.
2007

North Carolina State University