Publications

Showing results for "kern" 1-10 of 10

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Chemical vapor cleaning of 6H-SiC surfaces Journal of the Electrochemical Society, 146(9), 3448-3454. King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. 1999
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy Vacuum, 49(3), 189-191. Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. 1998
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy Journal of Crystal Growth, 183(4), 581-593. Kern, R. S., Tanaka, S., Rowland, L. B., & Davis, R. F. 1998
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy Journal of Materials Research, 13(7), 1816-1822. Kern, R. S., Rowland, L. B., Tanaka, S., & Davis, R. F. 1998
Gas-source molecular beam epitaxy of III-V nitrides Journal of Crystal Growth, 178(1/2), 87-101. Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., Rowland, L. B., Tanaka, S., & Kern, R. S. 1997
In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency Rossow, U., Edwards, N. V., Bremser, M. D.., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. In F.A. Ponce ... et al. (Eds.), III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449). (pp. 835-840). Pittsburgh, Pa.: Materials Research Society. Rossow, U., Edwards, N. V., Bremser, M. D.., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. 1997
Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 46(1-3), 240-247. Kern, R. S., & Davis, R. F. 1997
Homoepitaxial SiC growth by molecular beam epitaxy Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379-404. Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. 1997
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy Applied Physics Letters, 71(10), 1356-1358. Kern, R. S., & Davis, R. F. 1997
Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization Diamond and Related Materials, 6(10), 1282-1288. Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. 1997

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