Publications

Showing results for "karoui" 1-14 of 14

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
A density functional theory study of the atomic structure, formation energy, and vibrational properties of nitrogen-vacancy-oxygen defects in silicon Journal of Applied Physics, 108(3). Karoui, F. S., & Karoui, A. 2010
Segregation and enhanced diffusion of nitrogen in silicon induced by low energy ion bombardment Journal of Applied Physics, 97(8). Stoddard, N., Duscher, G., Karoui, A., Stevie, F., & Rozgonyi, G. 2005
Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99-104. Karoui, F. S., Karoui, A., Rozgonyi, G. A., Hourai, M., & Sueoka, K. 2004
Umbrella-like precipitates in nitrogen-doped Czochralski silicon wafers Applied Physics Letters, 84(11), 1889-1891. Kvit, A., Karoui, A., Duscher, G., & Rozgonyi, G. A. 2004
Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects Journal of Applied Physics, 96(6), 3255-3263. Karoui, A., Karoui, F. S., Rozgonyi, G. A., & Yang, D. 2004
Oxygen precipitation in nitrogen doped Czochralski silicon wafers. II. Effects of nitrogen and oxygen coupling Journal of Applied Physics, 96(6), 3264-3271. Karoui, A., & Rozgonyi, G. A. 2004
Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon Microelectronic Engineering, 66(1-4), 305-313. Rozgonyi, G. A., Karoui, A., Kvit, A., & Duscher, G. 2003
In situ point defect generation and agglomeration during electron-beam irradiation of nitrogen-doped Czochralski silicon Electrochemical and Solid State Letters, 6(11), G134-G136. Stoddard, N., Karoui, A., Duscher, G., Kvit, A., & Rozgonyi, G. 2003
Structure, energetics, and thermal stability of nitrogen-vacancy-related defects in nitrogen doped silicon Journal of the Electrochemical Society, 150(12), G771-G777. Karoui, A., Karoui, F. S., Rozgonyi, G. A., Hourai, M., & Sueoka, K. 2003
Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 82-84(2002), 69-74. Karoui, A., Karoui, F. S., Yang, D., & Rozgonyi, G. A. 2002
Multilayer TiC/TiN diffusion barrier films for copper Applied Physics Letters, 80(1), 79-81. Yoganand, S. N., Raghuveer, M. S., Jagannadham, K., Wu, L., Karoui, A., & Rozgonyi, G. 2002
Role of nitrogen related complexes in the formation of defects in silicon Applied Physics Letters, 80(12), 2114-2116. Karoui, A., Karoui, F. S., Kvit, A., Rozgonyi, G. A., & Yang, D. 2002
Integrated AlN/diamond heat spreaders for silicon device processing Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 20(6), 1974-1982. Yoganand, S. N., Jagannadham, K., Karoui, A., & Wang, H. 2002
Frequency-resolved microwave reflection photoconductance Journal of Applied Physics, 83(12), 7730-7735. Romanowski, A., Buczkowski, A., Karoui, A., & Rozgonyi, G. A. 1998

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