Publications

Showing results for "hoffmann" 1-25 of 35 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Polarity control in group-III nitrides beyond pragmatism Physical Review Applied, 5(5). Mohn, S., Stolyarchuk, N., Markurt, T., Kirste, R., Hoffmann, M. P., Collazo, R., Courville, A., Di Felice, R., Sitar, Z., Vennegues, P., & Albrecht, M. 2016
Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications Applied Physics Letters, 108(26). Alden, D., Guo, W., Kirste, R., Kaess, F., Bryan, I., Troha, T., Bagal, A., Reddy, P., Hernandez-Balderrama, L. H., Franke, A., Mita, S., Chang, C. H., Hoffmann, A., Zgonik, M., Collazo, R., & Sitar, Z. 2016
Strain engineered high reflectivity DBRs in the deep UV Proceedings of SPIE-the International Society for Optical Engineering, 9748). Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., Bobea, M., Tweedie, J., Kirste, R., Gerhold, M., Collazo, R., & Sitar, Z. 2016
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Journal of Applied Physics, 120(10). Kaess, F., Mita, S., Xie, J. Q., Reddy, P., Klump, A., Hernandez-Balderrama, L. H., Washiyama, S., Franke, A., Kirste, R., Hoffmann, A., Collazo, R., & Sitar, Z. 2016
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers Journal of Applied Physics, 120(13). Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., Gerhold, M., Collazo, R., & Sitar, Z. 2016
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics, 120(18). Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., Klump, A., Tweedie, J., Kirste, R., Mita, S., Gerhold, M., Collazo, R., & Sitar, Z. 2016
The Effect of illumination power density on carbon defect configuration in silicon doped gan Journal of Applied Physics, 120(23). Kaess, F., Reddy, P., Alden, D., Klump, A., Hernandez-Balderrama, L. H., Franke, A., Kirste, R., Hoffmann, A., Collazo, R., & Sitar, Z. 2016
On the origin of the 4.7 eV absorption and 2.8 eV emission bands in bulk AlN substrates ECS Transactions, 72 5) (pp. 31-40). Alden, D., Bryan, Z., Gaddy, B. E., Bryan, I., Callsen, G., Koukitu, A., Kumagai, Y., Hoffmann, A., Irving, D. L., Sitar, Z., & Collazo, R. 2016
Infrared nanoscopy of In-rich InGaN epilayers (Conference Presentation) Proceedings of SPIE-the International Society for Optical Engineering, 9954). Seidlitz, D., Fali, A., Kankanamge, I. S. M., Alden, D., Collazo, R., Hoffmann, A., Dietz, N., & Abate, Y. 2016
Growth and characterization of AlxGa1-xN lateral polarity structures Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039-1042. Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., Bryan, I., Bryan, Z., Gerhold, M., Collazo, R., & Sitar, Z. 2015
Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express, 8(4). Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., Gerhold, M. D., Collazo, R., Sitar, Z., & Zgonik, M. 2015
Adsorption and adhesion of common serum proteins to nanotextured gallium nitride Nanoscale, 7(6), 2360-2365. Bain, L. E., Hoffmann, M. P., Bryan, I., Collazo, R., & Ivanisevic, A. 2015
Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures Journal of Applied Physics, 115(4). Shelton, C. T., Sachet, E., Paisley, E. A., Hoffmann, M. P., Rajan, J., Collazo, R., Sitar, Z., & Maria, J. P. 2014
Properties of AlN based lateral polarity structures Physica Status Solidi C-Current Topics in Solid State Physics, 11 2) (pp. 261-264). Kirste, R., Mita, S., Hoffmann, M. P., Hussey, L., Guo, W., Bryan, I., Bryan, Z., Tweedie, J., Gerhold, M., Hoffmann, A., Collazo, R., & Sitar, Z. 2014
Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN Physical Review. B, Condensed Matter and Materials Physics, 90(4). Goni, A. R., Kaess, F., Reparaz, J. S., Alonso, M. I., Garriga, M., Callsen, G., Wagner, M. R., Hoffmann, A., & Sitar, Z. 2014
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements Physical Review. B, Condensed Matter and Materials Physics, 90(20). Callsen, G., Wagner, M. R., Reparaz, J. S., Nippert, F., Kure, T., Kalinowski, S., Hoffmann, A., Ford, M. J., Phillips, M. R., Dalmau, R. F., Schlesser, R., Collazo, R., & Sitar, Z. 2014
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters, 105(22). Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., Guo, W., Hoffmann, M., Kirste, R., Tweedie, J., Gerhold, M., Irving, D. L., Sitar, Z., & Collazo, R. 2014
Point defect management in GaN by Fermi-level control during growth Proceedings of SPIE-the International Society for Optical Engineering, 8986). Hoffmann, M. P., Tweedie, J., Kirste, R., Bryan, Z., Bryan, I., Gerhold, M., Sitar, Z., & Collazo, R. 2014
Fermi level control of point defects during the growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J., Sitar, Z., and Collazo, R. 2013
Fermi level control of point defects during growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J. Q., Sitar, Z., & Collazo, R. 2013
Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of SPIE-the International Society for Optical Engineering, 8631). Hoffmann, M. P., Gerhold, M., Kirste, R., Rice, A., Akouala, C. R., Xie, J. Q. Q., Mita, S., Collazo, R., & Sitar, Z. 2013
Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters, 102(18). Kirste, R., Mita, S., Hussey, L., Hoffmann, M. P., Guo, W., Bryan, I., Bryan, Z., Tweedie, J., Xie, J. Q., Gerhold, M., Collazo, R., & Sitar, Z. 2013
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters, 102(22). Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., Sitar, Z., Mita, S., & Gerhold, M. 2013
Ge doped GaN with controllable high carrier concentration for plasmonic applications Applied Physics Letters, 103(24). Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., Nenstiel, C., Hoffmann, A., Maria, J. P., Collazo, R., & Sitar, Z. 2013
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements Journal of Applied Physics, 113(10). Kirste, R., Hoffmann, M. P., Tweedie, J., Bryan, Z., Callsen, G., Kure, T., Nenstiel, C., Wagner, M. R., Collazo, R., Hoffmann, A., & Sitar, Z. 2013

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