Showing results for "heuss" 1-8 of 8

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(1), 175-179. Suh, Y. S., Heuss, G., & Misra, V. 2004
Thermal stability of TaSixNy films deposited by reactive sputtering on SiO2 Journal of the Electrochemical Society, 150(5), F79-F82. Suh, Y. S., Heuss, G. P., Misra, V., Park, D. G., & Limb, K. Y. 2003
Effect of the composition on the electrical properties of TaSixNy metal gate electrodes IEEE Electron Device Letters, 24(7), 439-441. Suh, Y. S., Heuss, G. P., Lee, J. H., & Misra, V. 2003
Electrical characteristics of TaSixNy/SO2/Si structures by Fowler-Nordheim current analysis Applied Physics Letters, 80(8), 1403-1405. Suh, Y. S., Heuss, G. P., & Misra, V. 2002
Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics Applied Physics Letters, 78(8), 1134-1136. Zhong, H. C., Heuss, G., Misra, V., Luan, H. F., Lee, C. H., & Kwong, D. L. 2001
Use of metal-oxide-semiconductor capacitors to detect interactions of Hf and Zr gate electrodes with SiO2 and ZrO2 Applied Physics Letters, 78(26), 4166-4168. Misra, V., Heuss, G. P., & Zhong, H. 2001
Electrical properties of Ru and RuO2 gate electrodes for Si- PMOSFET with ZrO2 and Zr-silicate dielectrics Journal of Electronic Materials, 30(12), 1493-1498. Zhong, H. C., Heuss, G., Suh, Y. S., Misra, V., & Hong, S. N. 2001
Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS IEEE Electron Device Letters, 21(12), 593-595. Zhong, H. C., Heuss, G., & Misra, V. 2000

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