Publications

Showing results for "hartlieb" 1-8 of 8

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces Journal of Applied Physics, 95(10), 5856-5864. Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. 2004
Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]' Journal of Applied Physics, 93(6), 3679. Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. 2003
Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy Journal of Crystal Growth, 257(3/4), 255-262. Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. 2003
Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag Journal of Applied Physics, 94(6), 3939-3948. Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. 2003
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces Journal of Applied Physics, 91(2), 732-738. Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. 2002
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN Journal of Applied Physics, 91(11), 9151-9160. Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. 2002
Photoluminescence characterization of Mg implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622-U628. Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., & Davis, R. F. 2000
Characterization of Be-implanted GaN annealed at high temperatures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17). Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. 1999

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