Publications

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The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 7,378,684. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2008
Method of manufacturing gallium nitride based high-electron mobility devices Patent:
Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Method of manufacturing gallium nitride based high-electron mobility devices. U.S. Patent No. 7,364,988. Washington, DC: U.S. Patent and Trademark Office. Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C.
2008
Gallium nitride based high-electron mobility devices Patent:
Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Gallium nitride based high-electron mobility devices. U.S. Patent No. 7,326,971. Washington, DC: U.S. Patent and Trademark Office. Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C.
2008
Review of structured thin films in wide bandgap semiconductors: pendeo-epitaxy of GaN and AlGaN Journal of Nanophotonics, 2. Gehrke, T. 2008
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches Patent:
Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F.
2007
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby Patent:
Gehrke, T., Linthicum, K. J., & Davis, R. F. (2007). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 7,217,641. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F.
2007
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., & Davis, R. F. (2006). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 7,095,062. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F.
2006
Second gallium nitride layers that extend into trenches in first gallium nitride layers Patent:
Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. U.S. Patent No. 6,897,483. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F.
2005
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts Patent:
Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. U.S. Patent No. 6,864,160. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F.
2005
Gallium nitride materials including thermally conductive regions Patent:
Borges, R., Linthicum, K. J., Weeks, T. W., & Gehrke, T. (2005). Gallium nitride materials including thermally conductive regions. U.S. Patent No. 6,956,250. Washington, DC: U.S. Patent and Trademark Office. Borges, R., Linthicum, K. J., Weeks, T. W., & Gehrke, T.
2005
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby Patent:
Gehrke, T., Linthicum, K. J., & Davis, R. F. (2004). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,686,261. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F.
2004
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates Patent:
Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. U.S. Patent No. 6,521,514. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F.
2003
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,621,148. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F.
2003
Methods of fabricating gallium nitride microelectronic layers on silicon layers Patent:
Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2003). Methods of fabricating gallium nitride microelectronic layers on silicon layers. U.S. Patent No. 6,602,764. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M.
2003
Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts Patent:
Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts. U.S. Patent No. 6,586,778. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F.
2003
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby Patent:
Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,545,300. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F.
2003
Gallium nitride materials and methods Patent:
Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. U.S. Patent No. 6,649,287. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J.
2003
Gallium nitride materials and methods Patent:
Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. U.S. Patent No. 6,617,060. Washington, DC: U.S. Patent and Trademark Office. Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J.
2003
Influence of polymer conformation on the shear modulus and morphology of polyallylamine and poly(alpha-L-lysine) hydrogels Macromolecules, 36(16), 6189-6201. Oliveira, E. D., Hirsch, S. G., Spontak, R. J., & Gehrke, S. H. 2003
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. U.S. Patent No. 6,376,339. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,462,355. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,380,108. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F.
2002
High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates Patent:
Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B. (2002). High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. U.S. Patent No. 6,489,221. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B.
2002
Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby Patent:
Gehrke, T., Linthicum, K. J., & Davis, R. F. (2002). Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby. U.S. Patent No. 6,486,042. Washington, DC: U.S. Patent and Trademark Office. Gehrke, T., Linthicum, K. J., & Davis, R. F.
2002
Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts Patent:
Linthicum, K. J., Gehrke, T., & Davis, R. F. (2002). Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts. U.S. Patent No. 6,403,451. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., & Davis, R. F.
2002

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