Publications

Showing results for "fulton" 1-25 of 28 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 26(1), 232-243. Strzhemechny, Y. M., Bataiev, M., Tumakha, S. P., Goss, S. H., Hinkle, C. L., Fulton, C. C., Lucovsky, G., & Brillson, L. J. 2008
Suppression of Jahn-Teller term-split band edge states in the X-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 (vol 75, pg 1591, 2006) Radiation Physics and Chemistry, 76(5), 907. Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Seo, H., Aspnes, D. E., & Luning, J. 2007
Local bonding analysis of the valence and conduction band features of TiO2 Journal of Applied Physics, 102(3). Fleming, L., Fulton, C. C., Lucovsky, G., Rowe, J. E., Ulrich, M. D., & Luning, J. 2007
Suppression of Jahn-Teller term-split band edge states in the x-ray absorption spectra of non-crystalline Zr silicates and Si oxynitride alloys, and alloys of ZrO2 with Y2O3 Radiation Physics and Chemistry, 75(11), 1591-1595. Lucovsky, G., Fulton, C. C., Ju, B. S., Stoute, N. A., Tao, S., Aspnes, D. E., & Luning, J. 2006
Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy Journal of Applied Physics, 99(2). Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. 2006
Electronic properties of the Zr-ZrO2-SiO2-Si(100) gate stack structure Journal of Applied Physics, 99(6). Fulton, C. C., Lucovsky, G., & Nemanich, R. J. 2006
Thermal stability of TiO2, ZrO2, or HfO2 on Si(100) by photoelectron emission microscopy (vol 99, pg 023519, 2006) Journal of Applied Physics, 99(10). Zeman, M. C., Fulton, C. C., Lucovsky, G., Nemanich, R. J., & Yang, W. C. 2006
A study of conduction band edge states in complex oxides by X-ray absorption spectroscopy Radiation Physics and Chemistry, 75(11), 1934-1938. Fulton, C. C., Edge, L. F., Lucovsky, G., & Luning, J. 2006
Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2 Radiation Physics and Chemistry, 75(11), 2097-2101. Lucovsky, G., Hinkle, C. L., Fulton, C. C., Stoute, N. A., Seo, H., & Luning, J. 2006
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra Microelectronics Reliability, 45(06-May), 827-830. Lucovsky, G., Hong, J. G., Fulton, C. C., Stoute, N. A., Zou, Y., Nemanich, R. J., Aspnes, D. E., Ade, H., & Schlom, D. G. 2005
Structural, microstructural, and electrical properties of gold films and Schottky contacts on remote plasma-cleaned, n-type ZnO{0001} surfaces Journal of Applied Physics, 97(10). Coppa, B. J., Fulton, C. C., Kiesel, S. M., Davis, R. F., Pandarinath, C., Burnette, J. E., Nemanich, R. J., & Smith, D. J. 2005
Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect IEEE Transactions on Device and Materials Reliability, 5(1), 65-83. Lucovsky, G., Fulton, C. C., Zhang, Y., Zou, Y., Luning, J., Edge, L. F., Whitten, J. L., Nemanich, R. J., Ade, H., Schlom, D. G., Afanase'v, V. V., Stesmans, A., Zollner, S., Triyoso, D., & Rogers, B. R. 2005
Studies of the coupling of final d*-states in mixed Hf and Ti oxides (HfO2)(x)(TiOx)(1-x) and other complex oxides Journal of Electron Spectroscopy and Related Phenomena, 144, 913-916. Fulton, C. C., Lucovsky, G., Zhang, Y., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. 2005
Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: comparisons between experiment and ab initio calculations Journal of Electron Spectroscopy and Related Phenomena, 144, 917-919. Lucovsky, G., Zhang, Y., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., & Whitten, J. L. 2005
Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings Thin Solid Films, 486(02-Jan), 129-135. Lucovsky, G., Fulton, C. C., Zhang, Y., Luning, J., Edge, L., Whitten, J. L., Nemanich, R. J., Schlom, D. G., & Afanase'v, V. V. 2005
In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces Journal of Applied Physics, 95(10), 5856-5864. Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. 2004
Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100) Applied Physics Letters, 84(4), 580-582. Fulton, C. C., Lucovsky, G., & Nemanich, R. J. 2004
A novel approach for determining the effective tunneling mass of electrons in HfO2 and other high-K alternative gate dielectrics for advanced CMOS devices Microelectronic Engineering, 72(04-Jan), 257-262. Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. 2004
Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221-2235. Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., Scholm, D. G., & Freeouf, J. L. 2004
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers Applied Surface Science, 234(37990), 240-245. Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. 2004
Interface instabilities and electronic properties of ZrO2 on silicon (100) Journal of Applied Physics, 96(5), 2665-2673. Fulton, C. C., Cook, T. E., Lucovsky, G., & Nemanich, R. J. 2004
X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132-2138. Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., & Ade, H. 2004
Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 (ZrO2) layers sandwiched between thicker SiO2 layers Surface Science, 566(Sep 20 2004), 1185-1189. Hinkle, C. L., Fulton, C., Nemanich, R. J., & Lucovsky, G. 2004
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) Journal of Applied Physics, 93(7), 3995-4004. Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., Lucovsky, G., & Nemanich, R. J. 2003
Band offset measurements of the Si3N4/GaN (0001) interface Journal of Applied Physics, 94(6), 3949-3954. Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. 2003

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