Publications

Showing results for "el-masry" 1-25 of 54 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Growth and characterization of high-quality, relaxed in (y) Ga1-y N templates for optoelectronic applications Journal of Electronic Materials, 44(11), 4161-4166. Van Den Broeck, D. M., Bharrat, D., Liu, Z., El-Masry, N. A., & Bedair, S. M. 2015
Strain-balanced InGaN/GaN multiple quantum wells Applied Physics Letters, 105(3). Van den Broeck, D. M., Bharrat, D., Hosalli, A. M., El-Masry, N. A., & Bedair, S. M. 2014
Strain-balanced InGaN/GaN multiple quantum wells Applied Physics Letters, 105(3). Van den Broeck, D. M., Bharrat, D., Hosalli, A. M., El-Masry, N. A., & Bedair, S. M. 2014
Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires Optics Letters, 39(6), 1501-1504. You, G. J., Liu, J., Jiang, Z. Y., Wang, L., El-Masry, N. A., Hosalli, A. M., Bedair, S. M., & Xu, J. 2014
Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy Journal of Crystal Growth, 367, 88-93. Frajtag, P., Nepal, N., Paskova, T., Bedair, S. M., & El-Masry, N. A. 2013
Carrier transport and improved collection in thin-barrier InGaAs/GaAsP strained quantum well solar cells IEEE Journal of Photovoltaics, 3(1), 278-283. Bradshaw, G. K., Carlin, C. Z., Samberg, J. P., El-Masry, N. A., Colter, P. C., & Bedair, S. M. 2013
Interface properties of Ga(As,P)/(In,Ga)As strained multiple quantum well structures Applied Physics Letters, 103(7). Samberg, J. P., Alipour, H. M., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., LeBeau, J. M., El-Masry, N. A., & Bedair, S. M. 2013
Gallium nitride nanowires by maskless hot phosphoric wet etching Applied Physics Letters, 103(8). Bharrat, D., Hosalli, A. M., Van Den Broeck, D. M., Samberg, J. P., Bedair, S. M., & El-Masry, N. A. 2013
Inversion by metalorganic chemical vapor deposition from N-to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes Applied Physics Letters, 103(23). Hosalli, A. M., Van Den Broeck, D. M., Bharrat, D., El-Masry, N. A., & Bedair, S. M. 2013
Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures IEEE Photovoltaic Specialists Conference, ) (pp. 1737-1740). Samberg, J. P., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., Edmondson, K., Hong, W., Fetzer, C., Karam, N., El-Masry, N. A., & Bedair, S. M. 2013
Tandem InGaP/GaAs-quantum well solar cells and their potential improvement through phosphorus carry-over management in multiple quantum well structures IEEE Photovoltaic Specialists Conference, ) (pp. 1737-1740). Samberg, J. P., Bradshaw, G. K., Carlin, C. Z., Colter, P. C., Edmondson, K., Hong, W., Fetzer, C., Karam, N., El-Masry, N. A., & Bedair, S. M. 2013
Overgrowth of GaN on GaN nanowires produced by mask-less etching Journal of Crystal Growth, 352 1) (pp. 203-208). Frajtag, P., Hosalli, A. M., Samberg, J. P., Colter, P. C., Paskova, T., El-Masry, N. A., & Bedair, S. M. 2012
Embedded voids approach for low defect density in epitaxial GaN films Applied Physics Letters, 98(2). Frajtag, P., El-Masry, N. A., Nepal, N., & Bedair, S. M. 2011
Embedded voids formation by overgrowth on GaN nanowires for high-quality GaN films Journal of Crystal Growth, 322(1), 27-32. Frajtag, P., Samberg, J. P., El-Masry, N. A., Nepal, N., & Bedair, S. M. 2011
Strain relaxation in InxGa1-xN/GaN quantum well structures Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. 2011
Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Nepal, N., Frajtag, P., Zavada, J. M., El-Masry, N. A., & Bedair, S. M. 2011
Ferromagnetism and near infrared luminescence in neodymium and erbium doped gallium nitride via diffusion Materials Research Society Symposium Proceedings, 1183) (pp. 45-50). Luen, M. O., Nepal, N., Frajtag, P., Zavada, J. M., Brown, E., Hommerich, U., Bedair, S. M., & El Masry, N. A. 2010
Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films Applied Physics Letters, 94(13). Nepal, N., Luen, M. O., Zavada, J. M., Bedair, S. M., Frajtag, P., & El-Masry, N. A. 2009
Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range Applied Physics Letters, 92(10). Berkman, E. A., El-Masry, N. A., Emara, A., & Bedair, S. M. 2008
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures Applied Physics Letters, 90(15). Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. 2007
Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature Applied Physics Letters, 90(25). Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., & Zavada, J. M. 2007
Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys Applied Physics Letters, 91(22). Nepal, N., Bedair, S. M., El-Masry, N. A., Lee, D. S., Steckl, A. J., & Zavada, J. M. 2007
Correlation between photoluminescence and magnetic properties of GaMnN films Applied Physics Letters, 91(24). Nepal, N., Mahros, A. M., Bedair, S. M., El-Masry, N. A., & Zavada, J. M. 2007
Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(4), 1191-1194. Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. 2004
Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface Applied Physics Letters, 85(17), 3809-3811. Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. 2004

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