Publications

Showing results for "edmond" 1-9 of 9

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
High efficiency GaN-based LEDs and lasers on SiC Journal of Crystal Growth, 272(04-Jan), 242-250. Edmond, J., Abare, A., Bergman, M., Bharathan, J., Bunker, K. L., Emerson, D., Haberern, K., Ibbetson, J., Leung, M., Russell, P., & Slater, D. 2004
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Schetzina, J. F., Haberern, K. W., Kong, H. S., & Edmond, J. S. 1999
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., & Schetzina, J. F. 1999
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282-1285. Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Kong, H. S., & Edmond, J. A. 1998
MBE Growth and properties of GaN on GaN/SiC substrates Solid-state Electronics, 41(2), 213-218. Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Jr., Bowers, K. A., Hughes, William C., He, Y. W., El-Masry, N. A., Cook, James W, Jr., Schetzina, Jan F., Ren, J., & Edmond, J. A. 1997
Implantation and electrical activation of dopants into monocrystalline silicon carbide Patent:
Edmond, J. A., & Davis, R. F. (1992). Implantation and electrical activation of dopants into monocrystalline silicon carbide. U.S. Patent No. 5,087,576. Washington, DC: U.S. Patent and Trademark Office. Edmond, J. A., & Davis, R. F.
1992
Thin-film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon-carbide Proceedings of the IEEE, 79(5), 677-701. Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., & Edmond, J. A. 1991
P-N junction diodes in silicon carbide Patent:
Edmond, J. A., & Davis, R. F. (1990). P-N junction diodes in silicon carbide. U.S. Patent No. 4,947,218. Washington, DC: U.S. Patent and Trademark Office. Edmond, J. A., & Davis, R. F.
1990
Bipolar junction transistor on silicon carbide Patent:
Palmour, J. W., & Edmond, J. A. (1990). Bipolar junction transistor on silicon carbide. U.S. Patent No. 4945394. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W., & Edmond, J. A.
1990

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