Showing results for "edmond" 1-9 of 9
The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.
|High efficiency GaN-based LEDs and lasers on SiC||Journal of Crystal Growth, 272(04-Jan), 242-250.||2004|
|Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates||MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).||1999|
|A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications||MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).||1999|
|Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures||Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282-1285.||1998|
|MBE Growth and properties of GaN on GaN/SiC substrates||Solid-state Electronics, 41(2), 213-218.||1997|
|Implantation and electrical activation of dopants into monocrystalline silicon carbide||
Edmond, J. A., & Davis, R. F. (1992). Implantation and electrical activation of dopants into monocrystalline silicon carbide. U.S. Patent No. 5,087,576. Washington, DC: U.S. Patent and Trademark Office.
|Thin-film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon-carbide||Proceedings of the IEEE, 79(5), 677-701.||1991|
|P-N junction diodes in silicon carbide||
Edmond, J. A., & Davis, R. F. (1990). P-N junction diodes in silicon carbide. U.S. Patent No. 4,947,218. Washington, DC: U.S. Patent and Trademark Office.
|Bipolar junction transistor on silicon carbide||
Palmour, J. W., & Edmond, J. A. (1990). Bipolar junction transistor on silicon carbide. U.S. Patent No. 4945394. Washington, DC: U.S. Patent and Trademark Office.