Publications

Showing results for "davis" 1-25 of 277 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Prediction of the structures of the plant-specific regions of vascular plant cellulose synthases and correlated functional analysis Cellulose, 23(1), 145-161. Sethaphong, L., Davis, J. K., Slabaugh, E., Singh, A., Haigler, C. H., & Yingling, Y. G. 2016
Comparative structural and computational analysis supports eighteen cellulose synthases in the plant cellulose synthesis complex Scientific Reports, 6. Nixon, B. T., Mansouri, K., Singh, A., Du, J., Davis, J. K., Lee, J. G., Slabaugh, E., Vandavasi, V. G., O'Neill, H., Roberts, E. M., Roberts, A. W., Yingling, Y. G., & Haigler, C. H. 2016
Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface Physica Status Solidi. B, Basic Solid State Physics, 252(2), 391-396. King, S. W., Nemanich, R. J., & Davis, R. F. 2015
Cleaning of pyrolytic hexagonal boron nitride surfaces Surface and Interface Analysis, 47(7), 798-803. King, S. W., Nemanich, R. J., & Davis, R. F. 2015
Band alignment at AlN/Si (111) and (001) interfaces Journal of Applied Physics, 118(4). King, S. W., Nemanich, R. J., & Davis, R. F. 2015
Hydrogen desorption kinetics for aqueous hydrogen fluoride and remote hydrogen plasma processed silicon (001) surfaces Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 33(5). King, S. W., Davis, R. F., Carter, R. J., Schneider, T. P., & Nemanich, R. J. 2015
Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 33(5). King, S. W., Tanaka, S., Davis, R. F., & Nemanich, R. J. 2015
Desorption and sublimation kinetics for fluorinated aluminum nitride surfaces Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 32(5). King, S. W., Davis, R. F., & Nemanich, R. J. 2014
Valence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001) Applied Physics Letters, 105(8). King, S. W., Nemanich, R. J., & Davis, R. F. 2014
Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 32(6). King, S. W., Davis, R. F., & Nemanich, R. J. 2014
Cellulose synthases: new insights from crystallography and modeling Trends in Plant Science, 19(2), 99-106. Slabaugh, E., Davis, J. K., Haigler, C. H., Yingling, Y. G., & Zimmer, J. 2014
Universal phonon mean free path spectra in crystalline semiconductors at high temperature Scientific Reports, 3. Freedman, J. P., Leach, J. H., Preble, E. A., Sitar, Z., Davis, R. F., & Malen, J. A. 2013
Dislocations as quantum wires: Buffer leakage in AlGaN/GaN heterostructures Journal of Materials Research, 28(13), 1687-1691. Reynolds, C. L., Reynolds, J. G., Crespo, A., Gillespie, J. K., Chabak, K. D., & Davis, R. F. 2013
Surface and defect microstructure of GaN and AlN layers grown on hydrogen-etched 6H-SiC(0001) substrates Acta Materialia, 58(6), 2165-2175. Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. 2010
On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0) Applied Surface Science, 255(13-14), 6535-6539. Bishop, S. M., Reynolds, C. L., Molstad, J. C., Stevie, F. A., Barnhardt, D. E., & Davis, R. F. 2009
Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates Acta Materialia, 57(14), 4001-4008. Reitmeier, Z. J., Einfeldt, S., Davis, R. F., Zhang, X. Y., Fang, X. L., & Mahajan, S. 2009
Hydrogen desorption kinetics and band bending for 6H-SiC(0001) surfaces Surface Science, 603(20), 3104-3118. King, S. W., Davis, R. F., & Nemanich, R. J. 2009
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 7,378,684. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2008
Kinetics of Ga and In desorption from (7x7)Si(111) and (3x3)6H-SiC(0001) surfaces Surface Science, 602(2), 405-415. King, S. W., Davis, R. F., & Nemanich, R. J. 2008
Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(1 1 (2)over-bar 0) Journal of Crystal Growth, 311(1), 72-78. Bishop, S. M., Reynolds, C. L., Liliental-Weber, Z., Uprety, Y., Ebert, C. W., Stevie, F. A., Park, J. S., & Davis, R. F. 2008
Nanoceria as antioxidant: Synthesis and biomedical applications JOM: the Journal of the Minerals, Metals & Materials Society, 60(3), 33-37. Karakoti, A. S., Monteiro-Riviere, N. A., Aggarwal, R., Davis, J. P., Narayan, R. J., Self, W. T., McGinnis, J., & Seal, S. 2008
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches Patent:
Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. U.S. Patent No. 7,195,993. Washington, DC: U.S. Patent and Trademark Office. Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F.
2007
Electrical and optical properties of ZnO (000(1)over-bar) wafers implanted with argon Journal of Applied Physics, 101(2). Adekore, B. T., Davis, R. F., & Barlage, D. W. 2007
Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H-SiC (11(2)over-bar0) Journal of Crystal Growth, 300(1), 83-89. Bishop, S. M., Park, J. S., Gu, J., Wagner, B. P., Reltmeier, Z. J., Batchelor, D. A., Zakharov, D. N., Liliental-Weber, Z., & Davis, R. F. 2007
Characterization of growth defects in thin GaN layers with X-ray microbeam Physica Status Solidi. B, Basic Solid State Physics, 244(5), 1735-1742. Barabash, R. I., Ice, G. E., Roder, C., Budai, J., Liu, W., Figge, S., Einfeldt, S., Hommel, D., & Davis, R. F. 2007

North Carolina State University