Publications

Showing results for "dalmau" 1-25 of 35 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Influence of high-temperature processing on the surface properties of bulk AlN substrates Journal of Crystal Growth, 446, 33-38. Tojo, S., Yamamoto, R., Tanaka, R., Thieu, Q. T., Togashi, R., Nagashima, T., Kinoshita, T., Dalmau, R., Schlesser, R., Murakami, H., Collazo, R., Koukitu, A., Monemar, B., Sitar, Z., & Kumagai, Y. 2016
Characterization of threading dislocations in pvt-grown aln substrates via x-ray topography and ray tracing simulation Journal of Electronic Materials, 43(4), 838-842. Zhou, T. Y., Raghothamachar, B., Wu, F. Z., Dalmau, R., Moody, B., Craft, S., Schlesser, R., Dudley, M., & Sitar, Z. 2014
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters, 104(20). Gaddy, B. E., Bryan, Z., Bryan, I., Xie, J. Q., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., Kubota, Y., Kinoshita, T., Koukitu, A., Kirste, R., Sitar, Z., Collazo, R., & Irving, D. L. 2014
Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements Physical Review. B, Condensed Matter and Materials Physics, 90(20). Callsen, G., Wagner, M. R., Reparaz, J. S., Nippert, F., Kure, T., Kalinowski, S., Hoffmann, A., Ford, M. J., Phillips, M. R., Dalmau, R. F., Schlesser, R., Collazo, R., & Sitar, Z. 2014
X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics, 113(12). Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., Xie, J., Collazo, R., & Sitar, Z. 2013
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters, 103(16). Gaddy, B. E., Bryan, Z., Bryan, I., Kirste, R., Xie, J. Q., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., Kubota, Y., Kinoshita, T., Koukitu, A., Sitar, Z., Collazo, R., & Irving, D. L. 2013
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN Physica Status Solidi. B, Basic Solid State Physics, 249(3), 511-515. Neuschl, B., Thonke, K., Feneberg, M., Mita, S., Xie, J. Q., Dalmau, R., Collazo, R., & Sitar, Z. 2012
Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a Bulk AIN substrate prepared by physical vapor transport Applied Physics Express, 5(5). Kumagai, Y., Kubota, Y., Nagashima, T., Kinoshita, T., Dalmau, R., Schlesser, R., Moody, B., Xie, J. Q., Murakami, H., Koukitu, A., & Sitar, Z. 2012
On the origin of the 265 nm absorption band in AlN bulk crystals Applied Physics Letters, 100(19). Collazo, R., Xie, J. Q., Gaddy, B. E., Bryan, Z., Kirste, R., Hoffmann, M., Dalmau, R., Moody, B., Kumagai, Y., Nagashima, T., Kubota, Y., Kinoshita, T., Koukitu, A., Irving, D. L., & Sitar, Z. 2012
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy Applied Physics Express, 5(12). Kinoshita, T., Hironaka, K., Obata, T., Nagashima, T., Dalmau, R., Schlesser, R., Moody, B., Xie, J. Q., Inoue, S., Kumagai, Y., Koukitu, A., & Sitar, Z. 2012
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society, 158(5), H530-H535. Dalmau, R., Moody, B., Schlesser, R., Mita, S., Xie, J., Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Tweedie, J., & Sitar, Z. 2011
Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi. A, Applications and Materials Science, 208(7), 1520-1522. Feneberg, M., Neuschl, B., Thonke, K., Collazo, R., Rice, A., Sitar, Z., Dalmau, R., Xie, J. Q., Mita, S., & Goldhahn, R. 2011
265 nm light emitting diodes on AlN single crystal substrates: Growth and characterization 2011 Conference on Lasers and Electro-Optics (CLEO), ). Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., Moody, B., Schlesser, R., Kirste, R., Hoffmann, A., & Sitar, Z. 2011
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. 2011
Characterization of dislocation arrays in AlN single crystals grown by PVT Physica Status Solidi. A, Applications and Materials Science, 208(7), 1545-1547. Dalmau, R., Moody, B., Xie, J. Q., Collazo, R., & Sitar, Z. 2011
Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi. A, Applications and Materials Science, 207 1) (pp. 45-48). Collazo, R., Mita, S., Xie, J. Q., Rice, A., Tweedie, J., Dalmau, R., & Sitar, Z. 2010
X-ray characterization of composition and relaxation of AlxGa1-xN(0 <= x <= 1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Tweedie, J., Collazo, R., Rice, A., Xie, J. Q., Mita, S., Dalmau, R., & Sitar, Z. (2010). X-ray characterization of composition and relaxation of AlxGa1-xN(0 Tweedie, J., Collazo, R., Rice, A., Xie, J. Q., Mita, S., Dalmau, R., & Sitar, Z. 2010
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics, 108(4). Rice, A., Collazo, R., Tweedie, J., Dalmau, R., Mita, S., Xie, J., & Sitar, Z. 2010
Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth, 312(1), 58-63. Lu, P., Collazo, R., Dalmau, R. F., Durkaya, G., Dietz, N., Raghothamachar, B., Dudley, M., & Sitar, Z. 2009
Dense, shaped articles constructed of a refractory material and methods of preparing such articles Patent:
Schlesser, R., Dalmau, R. F., Noveski, V., & Sitar, Z. (2009). Dense, shaped articles constructed of a refractory material and methods of preparing such articles. U.S. Patent No. 7,632,454. Schlesser, R., Dalmau, R. F., Noveski, V., & Sitar, Z.
2009
Seeded growth of AlN on SiC substrates and defect characterization Journal of Crystal Growth, 310(10), 2464-2470. Lu, P., Edgar, J. H., Cao, C., Hohn, K., Dalmau, R., Schlesser, R., & Sitar, Z. 2008
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics, 104(1). Mita, S., Collazo, R., Rice, A., Dalmau, R. F., & Sitar, Z. 2008
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters, 93(2). Kim, H. J., Choi, S., Yoo, D., Ryou, J. H., Dupuis, R. D., Dalmau, R. F., Lu, P., & Sitar, Z. 2008
lu Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations Applied Physics Letters, 93(13). Lu, P., Collazo, R., Dalmau, R. F., Durkaya, G., Dietz, N., & Sitar, Z. 2008
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials, 36(4), 414-419. Dalmau, R., Collazo, R., Mita, S., & Sitar, Z. 2007

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