Publications

Showing results for "cook" 1-19 of 19

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
High-performance three-stage cascade thermoelectric devices with 20% efficiency Journal of Electronic Materials, 44(6), 1936-1942. Cook, B. A., Chan, T. E., Dezsi, G., Thomas, P., Koch, C. C., Poon, J., Tritt, T., & Venkatasubramanian, R. 2015
Detonation initiation from spontaneous hotspots formed during cook-off observed in molecular dynamics simulations Journal of Physical Chemistry. C, 115(5), 2416-2422. Hu, Y. H., Brenner, D. W., Shi, Y. F. 2011
Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate Applied Physics Letters, 92(2). Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. 2008
Gallium nitride material transistors and methods associated with the same Patent:
Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. U.S. Patent No. 7,352,016. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A.
2008
Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate Applied Physics Letters, 90(15). Al-Ajmi, F. S., Kolbas, R. M., Roberts, J. C., Rajagopal, P., Cook, J. W., Piner, E. L., & Linthicum, K. J. 2007
Gallium nitride material transistors and methods associated with the same Patent:
Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A. (2006). Gallium nitride material transistors and methods associated with the same. U.S. Patent No. 7,135,720. Washington, DC: U.S. Patent and Trademark Office. Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., Johnson, J. W., Linthicum, K. J., Piner, E. L., Rajagopal, P., Roberts, J. C., Singhal, S., Therrien, R. J., & Vescan, A.
2006
Interface instabilities and electronic properties of ZrO2 on silicon (100) Journal of Applied Physics, 96(5), 2665-2673. Fulton, C. C., Cook, T. E., Lucovsky, G., & Nemanich, R. J. 2004
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) Journal of Applied Physics, 93(7), 3995-4004. Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., Lucovsky, G., & Nemanich, R. J. 2003
Band offset measurements of the Si3N4/GaN (0001) interface Journal of Applied Physics, 94(6), 3949-3954. Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. 2003
Band offset measurements of the GaN (0001)/HfO2 interface Journal of Applied Physics, 94(11), 7155-7158. Cook, T. E., Fulton, C. C., Mecouch, W. J., Davis, R. F., Lucovsky, G., & Nemanich, R. J. 2003
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride Journal of Electronic Materials, 28(3), 295-300. Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. 1999
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Schetzina, J. F., Haberern, K. W., Kong, H. S., & Edmond, J. S. 1999
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., & Schetzina, J. F. 1999
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2). Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. 1999
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1282-1285. Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Kong, H. S., & Edmond, J. A. 1998
Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire Journal of Crystal Growth, 195(1-4), 333-339. Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. 1998
MBE Growth and properties of GaN on GaN/SiC substrates Solid-state Electronics, 41(2), 213-218. Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Jr., Bowers, K. A., Hughes, William C., He, Y. W., El-Masry, N. A., Cook, James W, Jr., Schetzina, Jan F., Ren, J., & Edmond, J. A. 1997
Deposition of a-Si,Sn:H alloy films by reactive magnetron sputtering from separate Si and Sn targets Journal of Vacuum Science & Technology, A(4), 470-474. Parsons, G.N., Cook, J.W., Jr., Lucovsky, G., Lin, S.Y. & Mantini, M.J. 1986
Low defect density Si,Ge:H alloy films produced by magnetron sputtering from separate Si and Ge cathodes Journal of Non-crystalline Solids, 77 & 78, 885-889. Rudder, R.A., Parsons, G.N., Cook, J.W., Jr., & Lucovsky, G. 1985

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