Publications

Showing results for "carlson" 1-22 of 22

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2008). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 7,378,684. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2008
Atomic layer deposition methods Patent:
Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M. (2008). Atomic layer deposition methods. U.S. Patent No. 7,368,382. Washington, DC: U.S. Patent and Trademark Office. Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M.
2008
Atomic layer deposition methods Patent:
Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M. (2007). Atomic layer deposition methods. U.S. Patent No. 7,303,991. Washington, DC: U.S. Patent and Trademark Office. Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M.
2007
Deposition methods Patent:
Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M. (2005). Deposition methods. U.S. Patent No. 6,890,596. Washington, DC: U.S. Patent and Trademark Office. Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M.
2005
MIIIN based materials and methods and apparatus for producing same Patent:
Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. (2004). MIIIN based materials and methods and apparatus for producing same. U.S. Patent No. 6,784,085. Washington, DC: U.S. Patent and Trademark Office. Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T.
2004
Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon Patent:
Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T. (2004). Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon. U.S. Patent No. 6,692,568. Washington, DC: U.S. Patent and Trademark Office. Cuomo, J. J., Williams, N. M., Hanser, A. D., Carlson, E. P., & Thomas, D. T.
2004
Atomic layer deposition methods Patent:
Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M. (2004). Atomic layer deposition methods. U.S. Patent No. 6,753,271. Washington, DC: U.S. Patent and Trademark Office. Sarigiannis, D., Derderian, G. J., Basceri, C., Sandhu, G. S., Gealy, F. D., & Carlson, C. M.
2004
Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. U.S. Patent No. 6,376,339. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy Applied Physics Letters, 81(10), 1797-1799. Park, M., Maria, J. P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., Nemanich, R. J., Carlson, E., & Bumgarner, J. 2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,462,355. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2002
Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates Patent:
Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,177,688. Washington, DC: U.S. Patent and Trademark Office. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F.
2001
Ion implantation into gallium nitride Physics Reports, 351(5), 349-385. Ronning, C., Carlson, E. P., & Davis, R. F. 2001
Photoluminescence characterization of Mg implanted GaN MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622-U628. Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., Gehrke, T., Rajagopal, P., & Davis, R. F. 2000
Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition Materials Science Forum, 338(3), 1491-1494. Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Carlson, E. P., Robin, B. M., & Davis, R. F. 2000
Characterization of Be-implanted GaN annealed at high temperatures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17). Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. 1999
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38). Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Carlson, E., Ashmawi, W. M., & Davis, R. F. 1999
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9). Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., Mehregany, M., & Davis, R. F. 1999
Pendeo-epitaxy of gallium nitride thin films Applied Physics Letters, 75(2), 196-198. Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., Batchelor, D., & Davis, R. 1999
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms Journal of Applied Physics, 86(10), 5584-5593. King, S. W., Carlson, E. P., Therrien, R. J., Christman, J. A., Nemanich, R. J., & Davis, R. F. 1999
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates Journal of Electronic Materials, 27(4), 238-245. Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T. S., Carlson, E. P., Banks, A. D., Therrien, R. J., & Davis, R. F. 1998
Optical activation of Be implanted into GaN Applied Physics Letters, 73(12), 1622-1624. Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. 1998
ION Implantation of epitaxial GaN films: damage, doping and activation Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 127(1997 May), 463-466. Parikh, N., Suvkhanov, A., Lioubtchenko, M., Carlson, E., Bremser, M., Bray, D., Davis, R. F., & Hunn, J. 1997

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