Publications

Showing results for "bremser" 1-25 of 42 Next

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Method for depositing in particular crystalline layers, and device for carrying out the method Patent:
Bremser, M., Dauelsberg, M., & Strauch, G. K. (2005). Method for depositing in particular crystalline layers, and device for carrying out the method. U.S. Patent No. 6,972,050. Washington, DC: U.S. Patent and Trademark Office. Bremser, M., Dauelsberg, M., & Strauch, G. K.
2005
Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth Patent:
Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. U.S. Patent No. 6,602,763. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D.
2003
Gallium nitride semiconductor structures including lateral gallium nitride layers Patent:
Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Gallium nitride semiconductor structures including lateral gallium nitride layers. U.S. Patent No. 6,570,192. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D.
2003
Time-resolved photoluminescence in strained GaN layers Physica Status Solidi. A, Applications and Materials Science, 183(1), 151-155. Pozina, G., Edwards, N. V., Bergman, J. P., Monemar, B., Bremser, M. D., & Davis, R. F. 2001
Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition Applied Physics Letters, 78(8), 1062-1064. Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. 2001
Optical characterization of wide bandgap semiconductors Thin Solid Films, 364(1-2), 98-106. Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., Welhkamp, T., Wilmers, K., Cobet, C., Esser, N., Davis, R. F., Aspnes, D. E., & Monemar, B. 2000
Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer Patent:
Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. U.S. Patent No. 6,051,849. Washington, DC: U.S. Patent and Trademark Office. Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D.
2000
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN Diamond and Related Materials, 8(2-5), 288-294. Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. 1999
Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., Aspnes, D. E., & Monemar, B. 1999
Stimulated emission in GaN thin films in the temperature range of 300-700 K Journal of Applied Physics, 85(3), 1792-1795. Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., Goldenberg, B., Yang, W., Perry, W. G., Bremser, M. D., & Davis, R. F. 1999
Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9). Kaminska, E., Piotrowska, A., Jasinski, J., Kozubowski, J., Barcz, A., Golaszewska, K., Thomson, D. B., Davis, R. F., & Bremser, M. D. 1999
Evidence for localized Si-donor state and its metastable properties in AlGaN Applied Physics Letters, 74(25), 3833-3835. Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. 1999
Observation of highly dispersive surface states on GaN(0001)1x1 Physical Review. B, Condensed Matter and Materials Physics, 59(24), R15586-R15589. Chao, Y. C., Stagarescu, C. B., Downes, J. E., Ryan, P., Smith, K. E., Hanser, D., Bremser, M. D., & Davis, R. F. 1999
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746-1751. Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., Bremser, M. D., Davis, R. F., Amano, H., & Akasaki, I. 1999
Evidence for localized Si-donor state and its DX-like properties in AlGaN: Errata (vol 74, pg 3833, 1999) Applied Physics Letters, 75(20), 3225A. Skierbiszewski, C., Suski, T., Leszczynski, M., Shin, M., Skowronski, M., Bremser, M. D., & Davis, R. F. 1999
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy Journal of Electronic Materials, 27(4), 233-237. Nam, O.-H., Zheleva, T. S., Bremser, M. D., & Davis, R. F. 1998
Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC Thin Solid Films, 324(1-2), 107-114. Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. 1998
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films Thin Solid Films, 313(1998 Feb.), 187-192. Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., Liu, H., Stall, R. A., Kuech, T. F., Davis, R. F., & Aspnes, D. E. 1998
Trends in residual stress for GaN/AlN/6H-SiC heterostructures Applied Physics Letters, 73(19), 2808-2810. Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. 1998
Intrinsic exciton transitions in GaN Journal of Applied Physics, 83(1), 455-461. Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., Song, J. J., Kim, S. S., Goldenberg, B., Horning, R., Krishnankutty, S., Perry, W. G., Bremser, M. D.., & Davis, R. F. 1998
Cathodoluminescence studies of the deep level emission bands of AlxGa1 xN films deposited on 6H SiC(0001) Journal of Applied Physics, 83(1), 469-475. Perry, W. G., Bremser, M. B., & Davis, R. F. 1998
Acceptor and donor doping of AlxGa1 xN thin film alloys grown on 6H SiC(0001) substrates via metalorganic vapor phase epitaxy Journal of Electronic Materials, 27(4), 229-232. Bremser, M. D., Perry, W. G., Nam, O.-H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. 1998
Photoelectrochemical capacitance-voltage measurements in GaN Journal of Electronic Materials, 27(5), L26-L28. Stutz, C. E., Mack, M., Bremser, M. D., Nam, O.-H., Davis, R. F., & Look, D. C. 1998
Lattice site location studies of ion implanted Li-8 in GaN Journal of Applied Physics, 84(6), 3085-3089. Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsass, H., Bremser, M. D., Ronning, C., Davis, R. F., Wahl, U., & Bharuth-Ram, K. 1998
Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance Applied Physics Letters, 73(13), 1760-1762. Wisniewski, P., Knap, W., Malzac, J. P., Camassel, J., Bremser, M. D., Davis, R. F., & Suski, T. 1998

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