Publications

Showing results for "bobea" 1-17 of 17

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Strain engineered high reflectivity DBRs in the deep UV Proceedings of SPIE-the International Society for Optical Engineering, 9748). Franke, A., Hoffmann, P., Hernandez-Balderrama, L., Kaess, F., Bryan, I., Washiyama, S., Bobea, M., Tweedie, J., Kirste, R., Gerhold, M., Collazo, R., & Sitar, Z. 2016
High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers Journal of Applied Physics, 120(13). Franke, A., Hoffmann, M. P., Kirste, R., Bobea, M., Tweedie, J., Kaess, F., Gerhold, M., Collazo, R., & Sitar, Z. 2016
Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics, 120(18). Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., Klump, A., Tweedie, J., Kirste, R., Mita, S., Gerhold, M., Collazo, R., & Sitar, Z. 2016
Growth and characterization of AlxGa1-xN lateral polarity structures Physica Status Solidi. A, Applications and Materials Science, 212(5), 1039-1042. Hoffmann, M. P., Kirste, R., Mita, S., Guo, W., Tweedie, J., Bobea, M., Bryan, I., Bryan, Z., Gerhold, M., Collazo, R., & Sitar, Z. 2015
Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express, 8(4). Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., Gerhold, M. D., Collazo, R., Sitar, Z., & Zgonik, M. 2015
Sapphire decomposition and inversion domains in N-polar aluminum nitride Applied Physics Letters, 104(3). Hussey, L., White, R. M., Kirste, R., Mita, S., Bryan, I., Guo, W., Osterman, K., Haidet, B., Bryan, Z., Bobea, M., Collazo, R., & Sitar, Z. 2014
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Journal of Applied Physics, 115(10). Guo, W., Bryan, Z., Xie, J. Q., Kirste, R., Mita, S., Bryan, I., Hussey, L., Bobea, M., Haidet, B., Gerhold, M., Collazo, R., & Sitar, Z. 2014
Exciton transitions and oxygen as a donor in m-plane AlN homoepitaxial films Journal of Applied Physics, 115(13). Bryan, Z., Bryan, I., Bobea, M., Hussey, L., Kirste, R., Sitar, Z., & Collazo, R. 2014
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties Journal of Crystal Growth, 394, 55-60. Sochacki, T., Bryan, Z., Amilusik, M., Bobea, M., Fijalkowski, M., Bryan, I., Lucznik, B., Collazo, R., Weyher, J. L., Kucharski, R., Grzegory, I., Bockowski, M., & Sitar, Z. 2014
Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics, 116(13). Bryan, I., Bryan, Z., Bobea, M., Hussey, L., Kirste, R., Collazo, R., & Sitar, Z. 2014
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters, 105(22). Bryan, Z., Bryan, I., Gaddy, B. E., Reddy, P., Hussey, L., Bobea, M., Guo, W., Hoffmann, M., Kirste, R., Tweedie, J., Gerhold, M., Irving, D. L., Sitar, Z., & Collazo, R. 2014
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters, 102(6). Bryan, I., Rice, A., Hussey, L., Bryan, Z., Bobea, M., Mita, S., Xie, J., Kirste, R., Collazo, R., & Sitar, Z. 2013
Fermi level control of point defects during the growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J., Sitar, Z., and Collazo, R. 2013
X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics, 113(12). Bobea, M., Tweedie, J., Bryan, I., Bryan, Z., Rice, A., Dalmau, R., Xie, J., Collazo, R., & Sitar, Z. 2013
Fermi level control of point defects during growth of Mg-doped GaN Journal of Electronic Materials, 42(5), 815-819. Bryan, Z., Hoffmann, M., Tweedie, J., Kirste, R., Callsen, G., Bryan, I., Rice, A., Bobea, M., Mita, S., Xie, J. Q., Sitar, Z., & Collazo, R. 2013
Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters, 102(22). Rigler, M., Zgonik, M., Hoffmann, M. P., Kirste, R., Bobea, M., Collazo, R., Sitar, Z., Mita, S., & Gerhold, M. 2013
Ge doped GaN with controllable high carrier concentration for plasmonic applications Applied Physics Letters, 103(24). Kirste, R., Hoffmann, M. P., Sachet, E., Bobea, M., Bryan, Z., Bryan, I., Nenstiel, C., Hoffmann, A., Maria, J. P., Collazo, R., & Sitar, Z. 2013

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