Publications

Showing results for "berkman" 1-7 of 7

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Strain relaxation in InxGa1-xN/GaN quantum well structures Physica Status Solidi C-Current Topics in Solid State Physics, 8 7-8). Emara, A. M., Berkman, E. A., Zavada, J., El-Masry, N. A., & Bedair, S. M. 2011
Nearly lattice-matched n, i, and p layers for InGaN p-i-n photodiodes in the 365-500 nm spectral range Applied Physics Letters, 92(10). Berkman, E. A., El-Masry, N. A., Emara, A., & Bedair, S. M. 2008
Thermal conductivity of semi-insulating, p-type, and n-type GaN films on sapphire Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 26(3), 375-379. Jagannadham, K., Berkman, E. A., & Elmasry, N. 2008
Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures Applied Physics Letters, 90(15). Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. 2007
Magnetic and magnetotransport properties of (AlGaN/GaN): Mg/(GaMnN) heterostructures at room temperature Applied Physics Letters, 90(25). Mahros, A. M., Luen, M. O., Emara, A., Bedair, S. M., Berkman, E. A., El-Masry, N. A., & Zavada, J. M. 2007
Effect of doping on the magnetic properties of GaMnN: Fermi level engineering Applied Physics Letters, 86(10). Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., Reed, M. L., & Bedair, S. M. 2005
Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface Applied Physics Letters, 85(17), 3809-3811. Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. 2004

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