Publications

Showing results for "banerjee" 1-8 of 8

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Micro-fluidic channels on nanopatterned substrates: Monitoring protein binding to lipid bilayers with surface-enhanced Raman spectroscopy Chemical Physics Letters, 489(1-3), 121-126. Banerjee, A., Perez-Castillejos, R., Hahn, D., Smirnov, A. I., & Grebel, H. 2010
Racial differences among high-risk patients presenting with non-ST-segment elevation acute coronary syndromes (results from the SYNERGY trial) American Journal of Cardiology, 99(3), 315-321. Echols, M. R., Mahaffey, K. W., Banerjee, A., Pieper, K. S., Stebbins, A., Lansky, A., Cohen, M. G., Velazquez, E., Santos, R., Newby, L. K., Gurfinkel, E. P., Biasucci, L., Ferguson, J. J., & Califf, R. M. 2007
Adaptive two-stage designs in phase II clinical trials Statistics in Medicine, 25(19), 3382-3395. Banerjee, A., & Tsiatis, A. A. 2006
Quantification of microstructural features in alpha/beta titanium alloys Materials Science & Engineering. A, Structural Materials: Properties, Microstructure and Processing, 372(02-Jan), 191-198. Tiley, J., Searles, T., Lee, E., Kar, S., Banerjee, R., Russ, J. C., & Fraser, H. L. 2004
Voltage- and temperature-dependent gate capacitance and current model: Application to ZrO2 n-channel MOS capacitor IEEE Transactions on Electron Devices, 49(11), 1969-1978. Fan, Y. Y., Nieh, R. E., Lee, J. C., Lucovsky, G., Brown, G. A., Register, L. F., & Banerjee, S. K. 2002
Elimination of suboxide transition regions at Si-SiO(2) interfaces by rapid thermal annealing at 900 degrees C Applied Surface Science, 117(1997 June), 202-206. Lucovsky, G., Banerjee, A., Niimi, Hiroaki, Koh, Kwangil, Hinds, B., Meyer, C., Lupke, G., & Kurz, H. 1997
Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing Microelectronic Engineering, 36(1-4), 207-210. Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. 1997
Minimization of suboxide transition regions at Si-SiO2 interfaces by 900 degrees C rapid thermal annealing Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1074-1079. Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K., & Yang, H. 1997

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