Publications

Showing results for "bachmann" 1-22 of 22

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Nanoscale GaN whiskers fabricated by photoelectrochemical etching Journal of Applied Physics, 96(9), 5185-5188. Grenko, J. A., Reynolds, C. L., Schlesser, R., Hren, J. J., Bachmann, K., Sitar, Z., & Kotula, P. G. 2004
Selective etching of GaN from AlGaN/GaN and AlN/GaN structures MRS Internet Journal of Nitride Semiconductor Research, 9(5). Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. 2004
Semiclassical calculation of reaction rate constants for homolytical dissociation reactions of interest in organometallic vapor-phase epitaxy (OMVPE) Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment & General Theory, 107(19), 3708-3718. Cardelino, B. H., Moore, C. E., Cardelino, C. A., McCall, S. D., Frazier, D. O., & Bachmann, K. J. 2003
Stacking faults and twins in gallium phosphide layers grown on silicon Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 82(4), 685-698. Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. 2002
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy Acta Materialia, 50(6), 1275-1287. Narayanan, V., Mahajan, S., Bachmann, K. J., Woods, V., & Dietz, N. 2002
Theoretical study of indium compounds of interest for organometallic chemical vapor deposition Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment & General Theory, 105(5), 849-868. Cardelino, B. H., Moore, C. E., Cardelino, C. A., Frazier, D. O., & Bachmann, K. J. 2001
Theoretical analysis of phase-matched second-harmonic generation and optical parametric oscillation in birefringent semiconductor waveguides Applied Optics, 40(9), 1438-1441. Dimmock, J. O., Madarasz, F. L., Dietz, N., & Bachmann, K. J. 2001
Sellmeier parameters for ZnGaP2 and GaP Journal of Applied Physics, 87(3), 1564-1565. Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. 2000
Orientation mediated self-assembled gallium phosphide islands grown on silicon Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 80(3), 555-572. Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. 2000
Sellmeier parameters for ZnGaP2 and GaP (vol 87, pg 1564, 2000) Journal of Applied Physics, 87(10), 7597. Madarasz, F. L., Dimmock, J. O., Dietz, N., & Bachmann, K. J. 2000
Initial stages of heteroepitaxy of GaP on selected silicon surfaces Journal of the Electrochemical Society, 146(3), 1147-1150. Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. 1999
Optimal design of a high pressure organometallic chemical vapor deposition reactor Mathematical and Computer Modelling, 29(8), 65-80. Bachmann, K. J., Banks, H. T., Hopfner, C., Kepler, G. M., Lesure, S., McCall, S. D., & Scroggs, J. S. 1999
Origins of defects in self assembled GaP islands grown on Si(001) and Si(111) Thin Solid Films, 357(1), 53-56. Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. 1999
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 54(3), 207-209. Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. 1998
Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 57(1), 9-17. Kepler, G. M., Hopfner, C., Scroggs, J. S., & Bachmann, K. J. 1998
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance Journal of Crystal Growth, 183(3), 323-337. Bachmann, K. J., Sukidi, N., Hopfner, C., Harris, C., Dietz, N., Tran, H. T., Beeler, S., Ito, K., & Banks, H. T. 1998
Real-time monitoring of surface processes by p-polarized reflectance Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807-815. Dietz, N., Sukidi, N., Harris, C. Jay, & Bachmann, K. J. 1997
Molecular layer epitaxy by real-time optical process monitoring Applied Surface Science, 112(1997 Mar.), 38-47. Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., Dietz, N. A., Tran, H. T., Beeler, S. C., Ito, K., & Banks, H. T. 1997
Multilevel approaches toward monitoring and control of semiconductor epitaxy Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. (1997). Multilevel approaches toward monitoring and control of semiconductor epitaxy. In S. M. Prokes ... et al. (Eds.), Control of semiconductor surfaces and interfaces: Symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium proceedings, no. 448). (pp. 451-462). Pittsburgh, PA: Materials Research Society. Aspnes, D. E., Dietz, N., Rossow, U., & Bachmann, K. J. 1997
Heteroepitaxial processes at low and elevated pressures Bachmann, K. J., & Kepler, G. M. (1997). Heteroepitaxial processes at low and elevated pressures. In Materials research in low gravity: 28-29 July 1997, San Diego, California. (pp. 64-74). Bellingham, Wash., USA: SPIE. Bachmann, K. J., & Kepler, G. M. 1997
Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy Patent:
Bachmann, K. J., Dietz, N., & Miller, A. E. (1996). Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy. U.S. Patent No. 5552327. Washington, DC: U.S. Patent and Trademark Office. Bachmann, K. J., Dietz, N., & Miller, A. E.
1996
The materials science of microelectronics Bachmann, K. J. (1995). The materials science of microelectronics. New York: VCH. Bachmann, K. J. 1995

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