Publications

Showing results for "Solid State Phenomena" 1-10 of 10

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
EBIC study of electrical activity of stacking faults in multicrystalline sheet silicon Solid State Phenomena, 108-109) (pp. 627-630). Uetikon-Zurich, Switzerland: Sci-Tech Pub. Ltd.; Enfield, N.H.: Trans Tech Pub. Ltd. Lu, J. G., Rozgonyi, G., Rand, J., & Jonczyk, R. 2005
Characterization of nucleation sites in nitrogen doped czochralski silicon by density functional theory and molecular mechanics Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96(2004), 99-104. Karoui, F. S., Karoui, A., Rozgonyi, G. A., Hourai, M., & Sueoka, K. 2004
Evaluation of silicon sheet film growth and wafer processing via structural, chemical and electrical diagnostics Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 95-96, 211-216. Rozgonyi, G. A., Lu, J., Zhang, R., Rand, J., & Jonczyk, R. 2004
Atomistic simulation of grain boundaries, triple junctions and related disclinations Shenderova, O. A., & Brenner, D. W. (2002). Atomistic simulation of grain boundaries, triple junctions and related disclinations. In Local lattice rotations and disclinations in microstructures of distorted crystalline materials: Proceedings of the International Workshop on local lattice rotations and disclinations in microstructures of distorted crystalline materials, held at Rauschenbach/Erzgebirge, April 10-14, 2000 (Solid state phenomena ; v. 87). (pp. 205-213). Switzerland: Scitech; Enfield, N.H.: Distributed in the Americas by Trans Tech. Shenderova, O. A., & Brenner, D. W. 2002
Role of nitrogen-related complexes in the formation of defects in N-Cz silicon wafers Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 82-84(2002), 69-74. Karoui, A., Karoui, F. S., Yang, D., & Rozgonyi, G. A. 2002
Electron beam induced current contrast of oxygen precipitation related defects in Czochralski silicon Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 78-79(2000), 237-252. Ono, T., Sasaki, T., Kirk, H., & Rozgonyi, G. A. 2000
Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247-252. Beaman, K. L., Glasko, J. M., Koveshnikov, S. V., & Rozgonyi, G. A. 1999
In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397-402. Yarykin, N., Cho, C. R., Zuhr, R. A., & Rozgonyi, G. A. 1999
Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61-67. Kononchuk, O., Bondarenko, I., & Rozgonyi, G. 1998
Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science & Engineering. B, Solid-state Materials for Advanced Technology, 50(1-3), 134-141. Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., Weeks, T. W., Liu, H., Stall, R. A., Kuech, T. F., Davis, R. F., & Aspnes, D. E. 1997

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