Publications

Showing results for "Semiconductor Science and Technology" 1-13 of 13

The publications on this page are generated nightly from the NCSU Library's Scholarly Publications Repository. This repository is by no means a fully comprehensive listing of publications. Publications can be added to the repository manually by visiting the Publications Repository Submission Form.

Title Journal Year
Bandgap tuning in GaAs1-xSbx axial nanowires grown by Ga-assisted molecular beam epitaxy Semiconductor Science and Technology, 32(3). Ahmad, E., Ojha, S. K., Kasanaboina, P. K., Reynolds, C. L., Liu, Y., & Iyer, S. 2017
The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs) Semiconductor Science and Technology, 32(1). Arutt, C. N., Alles, M. L., Liao, W. J., Gong, H. Q., Davidson, J. L., Schrimpf, R. D., Reed, R. A., Weller, R. A., Bolotin, K., Nicholl, R., Pham, T. T., Zettl, A., Du, Q. Y., Hu, J. J., Li, M., Alphenaar, B. W., Lin, J. T., & Shurva, P. D. 2017
Te incorporation in GaAs1-xSbx nanowires and p-i-n axial structure Semiconductor Science and Technology, 31(12). Ahmad, E., Kasanaboina, P. K., Karim, M. R., Sharma, M., Reynolds, C. L., Liu, Y., & Iyer, S. 2016
Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy Semiconductor Science and Technology, 30(10). Kasanaboina, P. K., Ojha, S. K., Sami, S. U., Reynolds, C. L., Liu, Y., & Iyer, S. 2015
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate Semiconductor Science and Technology, 26(2). Wang, Y. Q., Alur, S., Sharma, Y., Tong, F., Thapa, R., Gartland, P., Issacs-Smith, T., Ahyi, C., Williams, J., Park, M., Johnson, M., Paskova, T., Preble, E. A., & Evans, K. R. 2011
Deep-level transient spectroscopy study on direct silicon bonded (110)/(100) interfacial grain boundary Semiconductor Science and Technology, 23(12). Yu, X. G., Lu, J. G., & Rozgonyi, G. 2008
Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2087-2096. Lucovsky, G., & Phillips, J. C. 2004
Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2097-2104. Lucovsky, G., Maria, J. P., & Phillips, J. C. 2004
Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 22(6), 2379-2383. Bae, C., Krug, C., & Lucovsky, G. 2004
Characteristics of TaSixNy thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(1), 175-179. Suh, Y. S., Heuss, G., & Misra, V. 2004
Etching characteristics of chromium thin films by an electron beam induced surface reaction Semiconductor Science and Technology, 18(4), 199-205. Wang, J. H., Griffis, D. P., Garcia, R., & Russell, P. E. 2003
Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179-2186. Lucovsky, G., Yang, H., Niimi, H., Thorpe, M. F., & Phillips, J. C. 2000
Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 1340-1351. Lucovsky, G. 1999

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